ON Semiconductor BAT54ALT1G
- Part Number:
- BAT54ALT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3581326-BAT54ALT1G
- Description:
- DIODE ARRAY SCHOTTKY 30V SOT23-3
- Datasheet:
- BAT54ALT1G
ON Semiconductor BAT54ALT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAT54ALT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Diode Element MaterialSILICON
- PackagingCut Tape (CT)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.10.00.70
- Capacitance10pF
- SubcategoryRectifier Diodes
- Voltage - Rated DC30V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating10A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBAT54AL
- Pin Count3
- Number of Elements2
- Element ConfigurationCommon Anode
- SpeedSmall Signal =< 200mA (Io), Any Speed
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr2μA @ 25V
- Power Dissipation225mW
- Voltage - Forward (Vf) (Max) @ If800mV @ 100mA
- Forward Current200mA
- Max Reverse Leakage Current2μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current600mA
- Output Current-Max0.1A
- Halogen FreeHalogen Free
- Breakdown Voltage30V
- Current - Average Rectified (Io)200mA DC
- Forward Voltage800mV
- Max Reverse Voltage (DC)30V
- Average Rectified Current200mA
- Reverse Recovery Time5 ns
- Peak Reverse Current2μA
- Max Repetitive Reverse Voltage (Vrrm)30V
- Peak Non-Repetitive Surge Current600mA
- Diode Configuration1 Pair Common Anode
- Max Forward Surge Current (Ifsm)600mA
- Recovery Time5 ns
- Height1.016mm
- Length3.0226mm
- Width1.397mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BAT54ALT1G Overview
A forward voltage of 800mV will enable the device to operate.This device can support a maximum output voltage of 0.1A.We should be monitoring the surge current and keeping it below 600mA.A forward voltage of 200mA will enable the device to operate.Using the part, you can draw a current of 10A.Approximately 10pF farads of capacitance are present in this device.Array is powered by a reverse voltage peak of 2μA.When reverse biased, its maximal reverse leakage current is 2μA, which corresponds to its maximum reverse leakage current.In addition to its primary function, this device creates "225mW" of heat (energy loss).During operation of this electronic or electrical device, the maximum amount of 225mW heat is produced (energy loss or waste).
BAT54ALT1G Features
800mV forward voltage
a maximum output voltage of 0.1A
10pF farads
a peak voltage of 2μA
a reverse voltage peak of 2μA
BAT54ALT1G Applications
There are a lot of ON Semiconductor
BAT54ALT1G applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
A forward voltage of 800mV will enable the device to operate.This device can support a maximum output voltage of 0.1A.We should be monitoring the surge current and keeping it below 600mA.A forward voltage of 200mA will enable the device to operate.Using the part, you can draw a current of 10A.Approximately 10pF farads of capacitance are present in this device.Array is powered by a reverse voltage peak of 2μA.When reverse biased, its maximal reverse leakage current is 2μA, which corresponds to its maximum reverse leakage current.In addition to its primary function, this device creates "225mW" of heat (energy loss).During operation of this electronic or electrical device, the maximum amount of 225mW heat is produced (energy loss or waste).
BAT54ALT1G Features
800mV forward voltage
a maximum output voltage of 0.1A
10pF farads
a peak voltage of 2μA
a reverse voltage peak of 2μA
BAT54ALT1G Applications
There are a lot of ON Semiconductor
BAT54ALT1G applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
BAT54ALT1G More Descriptions
BAT54ALT1G Series 30 V 600 mA Surface Mount Schottky Barrier Diode - SOT-23-3
Rectifier Diode, Schottky, 1 Phase, 2 Element, 0.1A, 30V V(RRM), Silicon, TO-236AA
Rectifier Diode Schottky 0.2A 5ns 3-Pin SOT-23 T/R
Diode, Schottky Barrier, Fast, Vr 30V, If 200mA, Pkg SOT-23 (TO-236),Vf 0.52VDC | ON Semiconductor BAT54ALT1G
200 mA, 30 V, Schottky Diode, Dual Common Anode
DIODE ARRAY SCHOTTKY 30V SOT23-3
Rectifier Array, Dual Common Anode, 200Ma, Sot-23, Full Reel; Diode Configuration:Dual Common Anode; Repetitive Peak Reverse Voltage:40V; Average Forward Current:200Ma; Forward Voltage Max:800Mv; Forward Surge Current:600Ma Rohs Compliant: Yes |Onsemi BAT54ALT1G.
These Schottky barrier diodes are designed for high speed switching applications circuit protection and voltage clamping. Extremely low forward voltage re conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
DIODE, SIGNAL, 30V, SOT-23; Product Range:BAT54 Series; Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:30V; Continuous Forward Current If:-; Total Capacitive Charge Qc:-; Diode Case Style:TO-263; No. of Pins:3 Pin; Junction Temperature Tj Max:125°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2018); Current If @ Vf:10mA; Current Ifsm:600mA; Device Marking:BAT54A; Forward Current If(AV):200mA; Forward Surge Current Ifsm Max:600mA; Forward Voltage VF Max:800mV; No. of Pins:3Pins; Operating Temperature Max:125°C; Pin Configuration:1(K1), 2(K2), 3(A1 A2); Power Dissipation Ptot Max:225mW; Reverse Recovery Time trr Max:5ns; Reverse Recovery Time trr Typ:5ns; Reverse Voltage Vr Max:30V; SMD Marking:B6; Semiconductor Technology:SiC; Termination Type:Surface Mount Device
Rectifier Diode, Schottky, 1 Phase, 2 Element, 0.1A, 30V V(RRM), Silicon, TO-236AA
Rectifier Diode Schottky 0.2A 5ns 3-Pin SOT-23 T/R
Diode, Schottky Barrier, Fast, Vr 30V, If 200mA, Pkg SOT-23 (TO-236),Vf 0.52VDC | ON Semiconductor BAT54ALT1G
200 mA, 30 V, Schottky Diode, Dual Common Anode
DIODE ARRAY SCHOTTKY 30V SOT23-3
Rectifier Array, Dual Common Anode, 200Ma, Sot-23, Full Reel; Diode Configuration:Dual Common Anode; Repetitive Peak Reverse Voltage:40V; Average Forward Current:200Ma; Forward Voltage Max:800Mv; Forward Surge Current:600Ma Rohs Compliant: Yes |Onsemi BAT54ALT1G.
These Schottky barrier diodes are designed for high speed switching applications circuit protection and voltage clamping. Extremely low forward voltage re conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
DIODE, SIGNAL, 30V, SOT-23; Product Range:BAT54 Series; Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:30V; Continuous Forward Current If:-; Total Capacitive Charge Qc:-; Diode Case Style:TO-263; No. of Pins:3 Pin; Junction Temperature Tj Max:125°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2018); Current If @ Vf:10mA; Current Ifsm:600mA; Device Marking:BAT54A; Forward Current If(AV):200mA; Forward Surge Current Ifsm Max:600mA; Forward Voltage VF Max:800mV; No. of Pins:3Pins; Operating Temperature Max:125°C; Pin Configuration:1(K1), 2(K2), 3(A1 A2); Power Dissipation Ptot Max:225mW; Reverse Recovery Time trr Max:5ns; Reverse Recovery Time trr Typ:5ns; Reverse Voltage Vr Max:30V; SMD Marking:B6; Semiconductor Technology:SiC; Termination Type:Surface Mount Device
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