Vishay Semiconductor Diodes Division BAS386-TR

Name: BAS386-TR
Brand: Vishay Semiconductor Diodes Division
SKU: 2422592-BAS386-TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BAS386-TR

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2422592-BAS386-TR

Description:: DIODE GEN 50V 200MA MICROMELF

ECAD Model:

Datasheet:: BAS386-TR

Specifications

Vishay Semiconductor Diodes Division BAS386-TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BAS386-TR.

Factory Lead Time
13 Weeks
Contact Plating
Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
2-SMD, No Lead
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Silver (Sn/Ag)
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
HTS Code
8541.10.00.70
Capacitance
8pF
Subcategory
Rectifier Diodes
Terminal Position
END
Terminal Form
WRAP AROUND
Base Part Number
BAS386
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5μA @ 40V
Voltage - Forward (Vf) (Max) @ If
900mV @ 100mA
Case Connection
ISOLATED
Forward Current
200mA
Max Reverse Leakage Current
5μA
Operating Temperature - Junction
125°C Max
Max Surge Current
5A
Forward Voltage
900mV
Max Reverse Voltage (DC)
50V
Average Rectified Current
200mA
Reverse Recovery Time
25 ns
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
50V
Capacitance @ Vr, F
880pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
5A
Reverse Voltage
50V
Max Forward Surge Current (Ifsm)
5A
Max Junction Temperature (Tj)
125°C
Height
1.2mm
Length
2mm
Width
1.2mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BAS386-TR Overview
Reverse voltage 50V is a reasonable value.Reverse leakage current from this device is 5μA volts at its maximum.For this device, the average rectified current is 200mA volts.In this case, forward current can reach 200mA.Phase diode rectifier is possible to use a surge current of maximum value 5A.Capacitance can cause the device to deliver a value of 8pF.Based on the data chart, the peak reverse is 5μA.

BAS386-TR Features
a maximal reverse leakage current of 5μA volts
an average rectified current of 200mA volts
the peak reverse is 5μA

BAS386-TR Applications
There are a lot of Vishay Semiconductor Diodes Division
BAS386-TR applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BAS386-TR More Descriptions

Rectifier Diode Small Signal Schottky 0.2A Automotive 2-Pin MicroMELF T/R
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 50V V(RRM)
DIODE, SCHOTTKY, 0.2A; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 50V; Forward Current If(AV): 200mA; Forward Voltage VF Max: 900mV; Forward ; Available until stocks are exhausted Alternative available
SMALL SIGNAL SCHOTTKY DIODE; Diode Type:Schottky; Repetitive Reverse Voltage Max, Vrrm:50V; Forward Current, If(AV):200mA; Forward Voltage Max, VF:900mV; Forward Surge Current Max, Ifsm:5A; Diode Case Style:MicroMELF; No. of Pins:2 ;RoHS Compliant: Yes
Configuration = Single / Peak Average Forward Current (If(AV)) mA = 200 / Reverse Repetitive Voltage Max. (Vrrm) V = 50 / Forward Voltage (Vf) mV = 900 / Reverse Current Max. uA = 5 / Capacitance pF = 8 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 125 / Package Type = MicroMELF / Pins = 2 / Mounting Type = SMD / Packaging = Tape & Reel / Thermal Resistance K/W = 320

Certification