Alliance Memory, Inc. AS7C1026B-12TCNTR
- Part Number:
- AS7C1026B-12TCNTR
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 3720240-AS7C1026B-12TCNTR
- Description:
- IC SRAM 1MBIT 12NS 44TSOP
- Datasheet:
- AS7C1026B-12TCNTR
Alliance Memory, Inc. AS7C1026B-12TCNTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS7C1026B-12TCNTR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Published1996
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage5V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count44
- JESD-30 CodeR-PDSO-G44
- Supply Voltage-Max (Vsup)5.5V
- Supply Voltage-Min (Vsup)4.5V
- Memory Size1Mb 64K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization64KX16
- Memory Width16
- Write Cycle Time - Word, Page12ns
- Memory Density1048576 bit
- Access Time (Max)12 ns
- Height Seated (Max)1.2mm
- Length18.415mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
AS7C1026B-12TCNTR Overview
The Time@Peak Reflow Temperature-Max (s) for this particular device is not specified, but it is important to note that it has a Pin Count of 44 and a JESD-30 Code of R-PDSO-G44. Additionally, the Supply Voltage-Max (Vsup) is 5.5V, making it suitable for a wide range of applications. With a Memory Size of 1Mb 64K x 16, this device offers ample storage capacity. It is also worth mentioning that the Memory Type is Volatile, meaning that the data stored in it will be lost when the power is turned off. The Memory Interface is Parallel, and the Memory Width is 16, providing efficient data transfer. With a Memory Density of 1048576 bit and a Height Seated (Max) of 1.2mm, this device offers high performance while taking up minimal space.
AS7C1026B-12TCNTR Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
AS7C1026B-12TCNTR Applications
There are a lot of Alliance Memory, Inc.
AS7C1026B-12TCNTR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
The Time@Peak Reflow Temperature-Max (s) for this particular device is not specified, but it is important to note that it has a Pin Count of 44 and a JESD-30 Code of R-PDSO-G44. Additionally, the Supply Voltage-Max (Vsup) is 5.5V, making it suitable for a wide range of applications. With a Memory Size of 1Mb 64K x 16, this device offers ample storage capacity. It is also worth mentioning that the Memory Type is Volatile, meaning that the data stored in it will be lost when the power is turned off. The Memory Interface is Parallel, and the Memory Width is 16, providing efficient data transfer. With a Memory Density of 1048576 bit and a Height Seated (Max) of 1.2mm, this device offers high performance while taking up minimal space.
AS7C1026B-12TCNTR Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
AS7C1026B-12TCNTR Applications
There are a lot of Alliance Memory, Inc.
AS7C1026B-12TCNTR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
AS7C1026B-12TCNTR More Descriptions
AS7C1026B Series 1-Mbit (64 K x 16) 5 V 12 ns CMOS Static RAM - TSOP 11-44
SRAM Chip Async Single 5V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R
SRAM 1Mb 64K x 16 5V 44pin TSOP II 12ns Commercial Temp T&R
SRAM 1M, 5V, 12ns FAST 64K x 16 Asynch SRAM
IC SRAM 1MBIT PARALLEL 44TSOP2
SRAM Chip Async Single 5V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R
SRAM 1Mb 64K x 16 5V 44pin TSOP II 12ns Commercial Temp T&R
SRAM 1M, 5V, 12ns FAST 64K x 16 Asynch SRAM
IC SRAM 1MBIT PARALLEL 44TSOP2
The three parts on the right have similar specifications to AS7C1026B-12TCNTR.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusJESD-609 CodeTerminal FinishHTS CodeView Compare
-
AS7C1026B-12TCNTR8 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES0°C~70°C TATape & Reel (TR)1996yesActive3 (168 Hours)44SRAM - Asynchronous4.5V~5.5VDUALNOT SPECIFIED15V0.8mmNOT SPECIFIED44R-PDSO-G445.5V4.5V1Mb 64K x 16VolatileSRAMParallel64KX161612ns1048576 bit12 ns1.2mm18.415mm10.16mmROHS3 Compliant----
-
8 WeeksSurface Mount48-LFBGA--40°C~85°C TATape & Reel (TR)--Active3 (168 Hours)-SRAM - Asynchronous2.7V~3.6V-NOT SPECIFIED---NOT SPECIFIED----16Mb 2M x 8VolatileSRAMParallel--10ns-----RoHS Compliant---
-
8 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATape & Reel (TR)2001yesActive3 (168 Hours)44SRAM - Asynchronous3V~3.6VDUAL26013.3V0.8mm4044R-PDSO-G443.6V3V2Mb 256K x 8VolatileSRAMParallel256KX8815ns2097152 bit15 ns1.2mm18.415mm10.16mmROHS3 Compliante3/e6PURE MATTE TIN/TIN BISMUTH-
-
8 WeeksThrough Hole28-DIP (0.300, 7.62mm)NO0°C~70°C TATube2009-Active3 (168 Hours)28SRAM - Asynchronous4.5V~5.5VDUALNOT SPECIFIED15V2.54mmNOT SPECIFIED-R-PDIP-T285.5V4.5V64Kb 8K x 8VolatileSRAMParallel8KX8815ns65536 bit15 ns5.334mm35.306mm7.62mmNon-RoHS Compliant--8542.32.00.41
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