Alliance Memory, Inc. AS7C325632-10BINTR

Name: AS7C325632-10BINTR
Brand: Alliance Memory, Inc.
SKU: 7374386-AS7C325632-10BINTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AS7C325632-10BINTR

Manufacturer:: Alliance Memory, Inc.

Ventron No:: 7374386-AS7C325632-10BINTR

Description:: Memory IC

ECAD Model:

Datasheet:: AS7C325632-10BINTR

Specifications

Alliance Memory, Inc. AS7C325632-10BINTR technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. AS7C325632-10BINTR.

Factory Lead Time
10 Weeks
Mounting Type
Surface Mount
Package / Case
90-TFBGA
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
90
HTS Code
8542.32.00.41
Technology
SRAM - Asynchronous
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
3.3V
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B90
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
8Mb 1M x 8
Memory Type
Volatile
Memory Format
SRAM
Memory Interface
Parallel
Organization
256KX32
Memory Width
32
Write Cycle Time - Word, Page
10ns
Memory Density
8388608 bit
Access Time (Max)
10 ns
RoHS Status
RoHS Compliant

Description

AS7C325632-10BINTR Overview
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. Embedded in the 90-TFBGA case, memory ics is a single file. On the chip, there is an 8Mb 1M x 8 memory, which is the size of the chip's memory. There is a SRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 2.7V~3.6V volts. The recommended mounting type for memory ics is Surface Mount. A total of 90 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 3.3V will be necessary.

AS7C325632-10BINTR Features
Package / Case: 90-TFBGA

AS7C325632-10BINTR Applications
There are a lot of Alliance Memory, Inc.
AS7C325632-10BINTR Memory applications.

supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card

AS7C325632-10BINTR More Descriptions

High Speed CMOS SRAM 2MB 3.3V 256K X 32 90-ball TFBGA
SRAM Chip Single 8Mbit 256K X 32 90-Pin TFBGA T/R
SRAM 8M, 3.3V, 10ns, FAST 256K X 32 Asyn SRAM
IC SRAM 8MBIT PARALLEL 90TFBGA

Product Comparison

The three parts on the right have similar specifications to AS7C325632-10BINTR.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Memory Density

Access Time (Max)

RoHS Status

Published

Terminal Pitch

Length

Height Seated (Max)

Width

View Compare
AS7C325632-10BINTR

Alliance Memory, Inc.

10 Weeks

Surface Mount

90-TFBGA

YES

-40°C~85°C TA

Tape & Reel (TR)

Active

3 (168 Hours)

90

8542.32.00.41

SRAM - Asynchronous

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3.3V

compliant

NOT SPECIFIED

R-PBGA-B90

3.6V

2.7V

8Mb 1M x 8

Volatile

SRAM

Parallel

256KX32

32

10ns

8388608 bit

10 ns

RoHS Compliant

-

-

-

-

-

-
AS7C164A-15PCN

Alliance Memory, Inc.

8 Weeks

Through Hole

28-DIP (0.300, 7.62mm)

NO

0°C~70°C TA

Tube

Active

3 (168 Hours)

28

8542.32.00.41

SRAM - Asynchronous

4.5V~5.5V

DUAL

NOT SPECIFIED

1

5V

-

NOT SPECIFIED

R-PDIP-T28

5.5V

4.5V

64Kb 8K x 8

Volatile

SRAM

Parallel

8KX8

8

15ns

65536 bit

15 ns

Non-RoHS Compliant

2009

2.54mm

35.306mm

5.334mm

7.62mm

AS7C325632-10BINTR vs AS7C164A-15PCN
AS7C164A-15PCNTR

Alliance Memory, Inc.

8 Weeks

Through Hole

28-DIP (0.300, 7.62mm)

NO

0°C~70°C TA

Tape & Reel (TR)

Active

3 (168 Hours)

28

8542.32.00.41

SRAM - Asynchronous

4.5V~5.5V

DUAL

NOT SPECIFIED

1

5V

compliant

NOT SPECIFIED

R-PDIP-T28

5.5V

4.5V

64Kb 8K x 8

Volatile

SRAM

Parallel

8KX8

8

15ns

65536 bit

15 ns

RoHS Compliant

2009

2.54mm

35.306mm

5.334mm

7.62mm

AS7C325632-10BINTR vs AS7C164A-15PCNTR
AS7C164A-15PINTR

Alliance Memory, Inc.

8 Weeks

Through Hole

28-DIP (0.300, 7.62mm)

-

-40°C~85°C TA

Tape & Reel (TR)

Active

3 (168 Hours)

-

-

SRAM - Asynchronous

4.5V~5.5V

-

-

-

-

-

-

-

-

-

64Kb 8K x 8

Volatile

SRAM

Parallel

-

-

15ns

-

-

ROHS3 Compliant

-

-

-

-

-

AS7C325632-10BINTR vs AS7C164A-15PINTR