Microsemi Corporation APTGT50X60T3G

Name: APTGT50X60T3G
Brand: Microsemi Corporation
SKU: 2854004-APTGT50X60T3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT50X60T3G

Manufacturer:: Microsemi Corporation

Ventron No:: 2854004-APTGT50X60T3G

Description:: IGBT TRENCH 3PHASE BRIDGE SP3

ECAD Model:

Datasheet:: APTGT50X60T3G

Specifications

Microsemi Corporation APTGT50X60T3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT50X60T3G.

Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time
36 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP3
Number of Pins
32
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
25
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
176W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
25
JESD-30 Code
R-XUFM-X25
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Turn On Delay Time
110 ns
Power - Max
176W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Turn-Off Delay Time
200 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Input Capacitance
3.15nF
Turn On Time
170 ns
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 50A
Turn Off Time-Nom (toff)
310 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
3.15nF @ 25V
VCEsat-Max
1.9 V
Height
11.5mm
Length
73.4mm
Width
40.8mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

APTGT50X60T3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT50X60T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT50X60T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT50X60T3G More Descriptions

APTGT50x Series 600 V 80 A Trench Field Stop IGBT3 Power Module - SP3
Trans IGBT Module N-CH 600V 80A 176000mW 32-Pin Case SP-3
Pm-Igbt-Tfs-Sp3F Sp3F Tube Rohs Compliant: Yes |Microchip APTGT50X60T3G
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
High Voltage Power Module, Three Phase bridge, 600V, RoHSMicrochip SCT

Product Comparison

The three parts on the right have similar specifications to APTGT50X60T3G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Configuration

Case Connection

Turn On Delay Time

Power - Max

Transistor Application

Polarity/Channel Type

Input

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

VCEsat-Max

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Max Operating Temperature

Min Operating Temperature

Element Configuration

Voltage - Collector Emitter Breakdown (Max)

View Compare
APTGT50X60T3G

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

36 Weeks

Chassis Mount, Screw

Chassis Mount

SP3

32

SILICON

-40°C~175°C TJ

2007

e1

yes

Active

1 (Unlimited)

25

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

176W

UPPER

UNSPECIFIED

25

R-XUFM-X25

6

Three Phase Inverter

ISOLATED

110 ns

176W

MOTOR CONTROL

N-CHANNEL

Standard

200 ns

600V

80A

250μA

600V

1.5V

3.15nF

170 ns

1.9V @ 15V, 50A

310 ns

Trench Field Stop

Yes

20V

3.15nF @ 25V

1.9 V

11.5mm

73.4mm

40.8mm

No

RoHS Compliant

Lead Free

-

-

-

-

-
APTGF500U60D4G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

D4

4

-

-

2005

e1

yes

Obsolete

1 (Unlimited)

4

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

2kW

UPPER

UNSPECIFIED

4

-

1

Single

ISOLATED

-

2000W

POWER CONTROL

N-CHANNEL

Standard

-

600V

625A

500μA

600V

-

26nF

285 ns

2.45V @ 15V, 500A

500 ns

NPT

No

20V

26nF @ 25V

-

-

-

-

-

RoHS Compliant

-

150°C

-40°C

-

-

APTGT50X60T3G vs APTGF500U60D4G
APTGF150A120T3AG

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP3

20

-

-

-

-

-

Obsolete

1 (Unlimited)

10

EAR99

-

Insulated Gate BIP Transistors

1.041kW

UPPER

UNSPECIFIED

25

R-XUFM-X10

2

Half Bridge

ISOLATED

-

1041W

POWER CONTROL

N-CHANNEL

Standard

-

1.2kV

210A

250μA

1.2kV

-

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

-

9.3nF @ 25V

3.7 V

-

-

-

No

RoHS Compliant

Lead Free

150°C

-40°C

Dual

1200V

APTGT50X60T3G vs APTGF150A120T3AG
APTGF350DU60G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

2012

e1

yes

Obsolete

1 (Unlimited)

7

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

1.562kW

UPPER

UNSPECIFIED

7

-

2

Dual, Common Source

ISOLATED

-

1562W

POWER CONTROL

N-CHANNEL

Standard

-

600V

430A

200μA

600V

-

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

20V

17.2nF @ 25V

2.5 V

-

-

-

-

RoHS Compliant

-

150°C

-40°C

Dual

-

APTGT50X60T3G vs APTGF350DU60G