Microsemi Corporation APTGT50DA170D1G
- Part Number:
- APTGT50DA170D1G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3072121-APTGT50DA170D1G
- Description:
- IGBT 1700V 70A 310W D1
- Datasheet:
- APTGT50DA170D1
Microsemi Corporation APTGT50DA170D1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT50DA170D1G.
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseD1
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- Published2004
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations7
- Terminal FinishTIN SILVER COPPER
- Max Power Dissipation310W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Pin Count7
- JESD-30 CodeR-XUFM-X7
- Number of Elements1
- ConfigurationSingle
- Case ConnectionISOLATED
- Power - Max310W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)2.4V
- Max Collector Current70A
- Current - Collector Cutoff (Max)6mA
- Collector Emitter Breakdown Voltage1.7kV
- Voltage - Collector Emitter Breakdown (Max)1700V
- Input Capacitance4.4nF
- Turn On Time330 ns
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 50A
- Turn Off Time-Nom (toff)965 ns
- IGBT TypeTrench Field Stop
- NTC ThermistorNo
- Input Capacitance (Cies) @ Vce4.4nF @ 25V
- RoHS StatusRoHS Compliant
APTGT50DA170D1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT50DA170D1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT50DA170D1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT50DA170D1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT50DA170D1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGT50DA170D1G More Descriptions
IGBT 1700V 70A 310W D1
Power Transistor Modules
Power Transistor Modules
The three parts on the right have similar specifications to APTGT50DA170D1G.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Power DissipationTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Input CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorInput Capacitance (Cies) @ VceRoHS StatusNumber of PinsECCN CodeMax Operating TemperatureMin Operating TemperatureSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusElement ConfigurationGate-Emitter Voltage-MaxVCEsat-MaxRadiation HardeningLead FreeView Compare
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APTGT50DA170D1GChassis MountChassis MountD1SILICON-40°C~150°C TJ2004e1yesDiscontinued1 (Unlimited)7TIN SILVER COPPER310WUPPERUNSPECIFIED7R-XUFM-X71SingleISOLATED310WMOTOR CONTROLN-CHANNELStandard2.4V70A6mA1.7kV1700V4.4nF330 ns2.4V @ 15V, 50A965 nsTrench Field StopNo4.4nF @ 25VRoHS Compliant--------------
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Chassis Mount, ScrewChassis MountSP3--2009--Obsolete1 (Unlimited)9-961WUPPERUNSPECIFIED25R-XUFM-X92Half BridgeISOLATED-POWER CONTROLN-CHANNELStandard1.2kV210A250μA1.2kV1200V9.3nF190 ns3.7V @ 15V, 150A390 nsNPTYes9.3nF @ 25VRoHS Compliant18EAR99150°C-40°CInsulated Gate BIP TransistorsNOT SPECIFIEDNOT SPECIFIEDNot QualifiedDual20V3.7 V--
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Chassis Mount, ScrewChassis MountSP1--2007e1yesObsolete1 (Unlimited)12TIN SILVER COPPER208WUPPERUNSPECIFIED12-4Full Bridge InverterISOLATED-MOTOR CONTROLN-CHANNELStandard1.2kV40A250μA1.2kV1200V1.65nF110 ns3.7V @ 15V, 25A386 nsNPTYes1.65nF @ 25VRoHS Compliant12EAR99150°C-40°CInsulated Gate BIP Transistors----20V3.7 VNoLead Free
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Chassis Mount, ScrewChassis MountSP3--2012e1yesObsolete1 (Unlimited)25TIN SILVER COPPER208WUPPERUNSPECIFIED25R-XUFM-X254Full Bridge InverterISOLATED-MOTOR CONTROLN-CHANNELStandard1.2kV40A250μA1.2kV1200V1.65nF110 ns3.7V @ 15V, 25A386 nsNPTYes1.65nF @ 25VRoHS Compliant32EAR99150°C-40°CInsulated Gate BIP TransistorsNOT SPECIFIEDNOT SPECIFIEDNot Qualified-20V3.7 V--
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