Microsemi Corporation APTGT400DA120G

Name: APTGT400DA120G
Brand: Microsemi Corporation
SKU: 3587190-APTGT400DA120G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT400DA120G

Manufacturer:: Microsemi Corporation

Ventron No:: 3587190-APTGT400DA120G

Description:: IGBT 1200V 560A 1785W SP6

ECAD Model:

Datasheet:: APTGT400DA120G

Specifications

Microsemi Corporation APTGT400DA120G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT400DA120G.

Factory Lead Time
36 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP6
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED
Max Power Dissipation
1.785kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
5
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
1785W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
560A
Current - Collector Cutoff (Max)
750μA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
28nF
Turn On Time
340 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 400A
Turn Off Time-Nom (toff)
620 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
28nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT400DA120G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT400DA120G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT400DA120G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT400DA120G More Descriptions

Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT400DA120G
Trans IGBT Module N-CH 1.2KV 560A 5-Pin Case SP6
High Voltage Power Module, Boost chopper, 1200V, RoHSMicrochip SCT
IGBT MODULE 1200V 560A 1785W SP6

Product Comparison

The three parts on the right have similar specifications to APTGT400DA120G.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

Max Operating Temperature

Min Operating Temperature

Subcategory

JESD-30 Code

Element Configuration

VCEsat-Max

Radiation Hardening

Lead Free

Gate-Emitter Voltage-Max

View Compare
APTGT400DA120G

Microsemi Corporation

36 Weeks

Chassis Mount, Screw

Chassis Mount

SP6

5

SILICON

-40°C~150°C TJ

Bulk

2012

e1

yes

Active

1 (Unlimited)

5

EAR99

TIN SILVER COPPER

AVALANCHE RATED

1.785kW

UPPER

UNSPECIFIED

5

1

Single

ISOLATED

1785W

POWER CONTROL

N-CHANNEL

Standard

1.2kV

560A

750μA

1.2kV

1200V

28nF

340 ns

2.1V @ 15V, 400A

620 ns

Trench Field Stop

No

28nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-
APTGF150A120T3AG

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP3

20

-

-

-

-

-

-

Obsolete

1 (Unlimited)

10

EAR99

-

-

1.041kW

UPPER

UNSPECIFIED

25

2

Half Bridge

ISOLATED

1041W

POWER CONTROL

N-CHANNEL

Standard

1.2kV

210A

250μA

1.2kV

1200V

9.3nF

190 ns

3.7V @ 15V, 150A

390 ns

NPT

Yes

9.3nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

R-XUFM-X10

Dual

3.7 V

No

Lead Free

-

APTGT400DA120G vs APTGF150A120T3AG
APTGF30TL601G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

-

2012

-

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

140W

-

-

-

1

Three Level Inverter

-

-

-

-

Standard

600V

42A

250μA

600V

-

1.35nF

-

2.45V @ 15V, 30A

-

NPT

No

1.35nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

-

-

2.45 V

-

-

20V

APTGT400DA120G vs APTGF30TL601G
APTGF100A1202G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP2

18

-

-

-

2012

-

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

568W

-

-

-

1

Half Bridge

-

-

-

-

Standard

1.2kV

135A

250μA

1.2kV

1200V

6.5nF

-

3.7V @ 15V, 100A

-

NPT

No

6.5nF @ 25V

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

-

Dual

3.7 V

-

-

20V

APTGT400DA120G vs APTGF100A1202G