Microsemi Corporation APTGT30H170T3G

Name: APTGT30H170T3G
Brand: Microsemi Corporation
SKU: 3587129-APTGT30H170T3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT30H170T3G

Manufacturer:: Microsemi Corporation

Ventron No:: 3587129-APTGT30H170T3G

Description:: IGBT MOD TRENCH FULL BRIDGE SP3

ECAD Model:

Datasheet:: APTGT30H170T3G

Specifications

Microsemi Corporation APTGT30H170T3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT30H170T3G.

Factory Lead Time
36 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP3
Number of Pins
32
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
25
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Additional Feature
AVALANCHE RATED
Max Power Dissipation
210W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
25
JESD-30 Code
R-XUFM-X25
Number of Elements
4
Configuration
Full Bridge Inverter
Case Connection
ISOLATED
Power - Max
210W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
45A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Input Capacitance
2.5nF
Turn On Time
170 ns
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Turn Off Time-Nom (toff)
850 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2.5nF @ 25V
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

APTGT30H170T3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT30H170T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT30H170T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT30H170T3G More Descriptions

Pm-Igbt-Tfs-Sp3 Sp3F Tube Rohs Compliant: Yes |Microchip APTGT30H170T3G
Trans IGBT Module N-CH 1.7KV 45A 32-Pin Case SP-3
High Voltage Power Module, Full bridge, 1700V, RoHSMicrochip SCT
IGBT MOD TRENCH FULL BRIDGE SP3
IGBT MODULE 1700V 45A 210W SP3

Product Comparison

The three parts on the right have similar specifications to APTGT30H170T3G.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

Radiation Hardening

RoHS Status

Max Operating Temperature

Min Operating Temperature

Subcategory

Gate-Emitter Voltage-Max

VCEsat-Max

Element Configuration

View Compare
APTGT30H170T3G

Microsemi Corporation

36 Weeks

Chassis Mount, Screw

Chassis Mount

SP3

32

SILICON

-40°C~150°C TJ

2006

e1

yes

Active

1 (Unlimited)

25

EAR99

TIN SILVER COPPER

AVALANCHE RATED

210W

UPPER

UNSPECIFIED

25

R-XUFM-X25

4

Full Bridge Inverter

ISOLATED

210W

POWER CONTROL

N-CHANNEL

Standard

1.7kV

45A

250μA

1.7kV

1700V

2.5nF

170 ns

2.4V @ 15V, 30A

850 ns

Trench Field Stop

Yes

2.5nF @ 25V

No

RoHS Compliant

-

-

-

-

-

-

-
APTGF300SK120G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP6

5

-

-

2012

e1

yes

Obsolete

1 (Unlimited)

5

EAR99

TIN SILVER COPPER

-

1.78kW

UPPER

UNSPECIFIED

5

-

1

Single

ISOLATED

1780W

MOTOR CONTROL

N-CHANNEL

Standard

1.2kV

400A

500μA

1.2kV

1200V

21nF

190 ns

3.9V @ 15V, 300A

400 ns

NPT

No

21nF @ 25V

-

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

20V

3.9 V

-

APTGT30H170T3G vs APTGF300SK120G
APTGF350DU60G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

2012

e1

yes

Obsolete

1 (Unlimited)

7

EAR99

TIN SILVER COPPER

-

1.562kW

UPPER

UNSPECIFIED

7

-

2

Dual, Common Source

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

Standard

600V

430A

200μA

600V

-

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

17.2nF @ 25V

-

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

20V

2.5 V

Dual

APTGT30H170T3G vs APTGF350DU60G
APTGF30TL601G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP1

12

-

-

2012

-

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

140W

-

-

-

-

1

Three Level Inverter

-

-

-

-

Standard

600V

42A

250μA

600V

-

1.35nF

-

2.45V @ 15V, 30A

-

NPT

No

1.35nF @ 25V

-

RoHS Compliant

150°C

-40°C

Insulated Gate BIP Transistors

20V

2.45 V

-

APTGT30H170T3G vs APTGF30TL601G