Microsemi Corporation APTGT30A170T1G

Name: APTGT30A170T1G
Brand: Microsemi Corporation
SKU: 3587128-APTGT30A170T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT30A170T1G

Manufacturer:: Microsemi Corporation

Ventron No:: 3587128-APTGT30A170T1G

Description:: IGBT MODULE TRENCH PHASE LEG SP1

ECAD Model:

Datasheet:: APTGT30A170T1G

Specifications

Microsemi Corporation APTGT30A170T1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT30A170T1G.

Factory Lead Time
36 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP1
Number of Pins
1
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2012
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
12
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
210W
Terminal Position
UPPER
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
12
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
210W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
45A
Current - Collector Cutoff (Max)
250μA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Input Capacitance
2.5nF
Turn On Time
170 ns
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Turn Off Time-Nom (toff)
850 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
2.5nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT30A170T1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT30A170T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT30A170T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT30A170T1G More Descriptions

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Trans IGBT Module N-CH 1.7KV 45A 12-Pin Case SP-1
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IGBT MODULE TRENCH PHASE LEG SP1
IGBT MODULE 1700V 45A 210W SP1

Product Comparison

The three parts on the right have similar specifications to APTGT30A170T1G.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Element Configuration

Case Connection

Power - Max

Transistor Application

Polarity/Channel Type

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Input Capacitance

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

NTC Thermistor

Gate-Emitter Voltage-Max

Input Capacitance (Cies) @ Vce

RoHS Status

Max Operating Temperature

Min Operating Temperature

VCEsat-Max

JESD-30 Code

View Compare
APTGT30A170T1G

Microsemi Corporation

36 Weeks

Chassis Mount, Screw

Chassis Mount

SP1

1

SILICON

-40°C~150°C TJ

2012

e1

yes

Active

1 (Unlimited)

12

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

210W

UPPER

THROUGH-HOLE

NOT SPECIFIED

NOT SPECIFIED

12

Not Qualified

2

Half Bridge

Dual

ISOLATED

210W

MOTOR CONTROL

N-CHANNEL

Standard

2.4V

45A

250μA

1.7kV

1700V

2.5nF

170 ns

2.4V @ 15V, 30A

850 ns

Trench Field Stop

Yes

20V

2.5nF @ 25V

RoHS Compliant

-

-

-

-

-
APTGF500U60D4G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

D4

4

-

-

2005

e1

yes

Obsolete

1 (Unlimited)

4

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

2kW

UPPER

UNSPECIFIED

-

-

4

-

1

Single

-

ISOLATED

2000W

POWER CONTROL

N-CHANNEL

Standard

600V

625A

500μA

600V

-

26nF

285 ns

2.45V @ 15V, 500A

500 ns

NPT

No

20V

26nF @ 25V

RoHS Compliant

150°C

-40°C

-

-

APTGT30A170T1G vs APTGF500U60D4G
APTGF350DU60G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP6

7

-

-

2012

e1

yes

Obsolete

1 (Unlimited)

7

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

1.562kW

UPPER

UNSPECIFIED

-

-

7

-

2

Dual, Common Source

Dual

ISOLATED

1562W

POWER CONTROL

N-CHANNEL

Standard

600V

430A

200μA

600V

-

17.2nF

51 ns

2.5V @ 15V, 360A

210 ns

NPT

No

20V

17.2nF @ 25V

RoHS Compliant

150°C

-40°C

2.5 V

-

APTGT30A170T1G vs APTGF350DU60G
APTGF25H120T3G

Microsemi Corporation

-

Chassis Mount, Screw

Chassis Mount

SP3

32

-

-

2012

e1

yes

Obsolete

1 (Unlimited)

25

EAR99

TIN SILVER COPPER

Insulated Gate BIP Transistors

208W

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

25

Not Qualified

4

Full Bridge Inverter

-

ISOLATED

-

MOTOR CONTROL

N-CHANNEL

Standard

1.2kV

40A

250μA

1.2kV

1200V

1.65nF

110 ns

3.7V @ 15V, 25A

386 ns

NPT

Yes

20V

1.65nF @ 25V

RoHS Compliant

150°C

-40°C

3.7 V

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APTGT30A170T1G vs APTGF25H120T3G