Microsemi Corporation APTGT200A602G

Name: APTGT200A602G
Brand: Microsemi Corporation
SKU: 3587088-APTGT200A602G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APTGT200A602G

Manufacturer:: Microsemi Corporation

Ventron No:: 3587088-APTGT200A602G

Description:: POWER MOD IGBT3 PHASE LEG SP2

ECAD Model:

Datasheet:: APTGT200A602G

Specifications

Microsemi Corporation APTGT200A602G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT200A602G.

Lifecycle Status
OBSOLETE (Last Updated: 3 weeks ago)
Factory Lead Time
22 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
SP2
Number of Pins
18
Operating Temperature
-40°C~175°C TJ
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
625W
Configuration
Half Bridge
Element Configuration
Dual
Power - Max
625W
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
290A
Current - Collector Cutoff (Max)
50μA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
12.3nF
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 200A
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
12.3nF @ 25V
RoHS Status
RoHS Compliant

Description

APTGT200A602G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT200A602G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT200A602G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

APTGT200A602G More Descriptions

Trans IGBT Module N-CH 600V 290A 18-Pin Case SP-2
IGBT MODULE 600V 290A 625W SP2
POWER MOD IGBT3 PHASE LEG SP2

Product Comparison

The three parts on the right have similar specifications to APTGT200A602G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Max Power Dissipation

Configuration

Element Configuration

Power - Max

Input

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Input Capacitance

Vce(on) (Max) @ Vge, Ic

IGBT Type

NTC Thermistor

Input Capacitance (Cies) @ Vce

RoHS Status

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Case Connection

Transistor Application

Polarity/Channel Type

Voltage - Collector Emitter Breakdown (Max)

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

VCEsat-Max

Radiation Hardening

Lead Free

View Compare
APTGT200A602G

Microsemi Corporation

OBSOLETE (Last Updated: 3 weeks ago)

22 Weeks

Chassis Mount, Screw

Chassis Mount

SP2

18

-40°C~175°C TJ

2012

Active

1 (Unlimited)

EAR99

625W

Half Bridge

Dual

625W

Standard

600V

290A

50μA

600V

12.3nF

1.9V @ 15V, 200A

Trench Field Stop

No

12.3nF @ 25V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APTGF150A120T3WG

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP3

18

-

2009

Obsolete

1 (Unlimited)

EAR99

961W

Half Bridge

Dual

-

Standard

1.2kV

210A

250μA

1.2kV

9.3nF

3.7V @ 15V, 150A

NPT

Yes

9.3nF @ 25V

RoHS Compliant

9

150°C

-40°C

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

25

R-XUFM-X9

Not Qualified

2

ISOLATED

POWER CONTROL

N-CHANNEL

1200V

190 ns

390 ns

20V

3.7 V

-

-

APTGT200A602G vs APTGF150A120T3WG
APTGF150A120T3AG

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP3

20

-

-

Obsolete

1 (Unlimited)

EAR99

1.041kW

Half Bridge

Dual

1041W

Standard

1.2kV

210A

250μA

1.2kV

9.3nF

3.7V @ 15V, 150A

NPT

Yes

9.3nF @ 25V

RoHS Compliant

10

150°C

-40°C

Insulated Gate BIP Transistors

UPPER

UNSPECIFIED

-

-

25

R-XUFM-X10

-

2

ISOLATED

POWER CONTROL

N-CHANNEL

1200V

190 ns

390 ns

-

3.7 V

No

Lead Free

APTGT200A602G vs APTGF150A120T3AG
APTGF100A1202G

Microsemi Corporation

-

-

Chassis Mount, Screw

Chassis Mount

SP2

18

-

2012

Obsolete

1 (Unlimited)

EAR99

568W

Half Bridge

Dual

-

Standard

1.2kV

135A

250μA

1.2kV

6.5nF

3.7V @ 15V, 100A

NPT

No

6.5nF @ 25V

RoHS Compliant

-

150°C

-40°C

Insulated Gate BIP Transistors

-

-

-

-

-

-

-

1

-

-

-

1200V

-

-

20V

3.7 V

-

-

APTGT200A602G vs APTGF100A1202G