APTGL325DA120D3G

Microsemi Corporation APTGL325DA120D3G

Part Number:
APTGL325DA120D3G
Manufacturer:
Microsemi Corporation
Ventron No:
3587152-APTGL325DA120D3G
Description:
IGBT 1200V 420A 1500W D3
ECAD Model:
Datasheet:
APTGL325DA120D3G

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Specifications
Microsemi Corporation APTGL325DA120D3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGL325DA120D3G.
  • Factory Lead Time
    22 Weeks
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    D-3 Module
  • Number of Pins
    11
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~175°C TJ
  • Published
    2012
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    1.5kW
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Pin Count
    11
  • JESD-30 Code
    R-XUFM-X5
  • Number of Elements
    1
  • Configuration
    Single
  • Case Connection
    ISOLATED
  • Power - Max
    1500W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    420A
  • Current - Collector Cutoff (Max)
    5mA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Input Capacitance
    18.6nF
  • Turn On Time
    270 ns
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 300A
  • Turn Off Time-Nom (toff)
    530 ns
  • IGBT Type
    Trench Field Stop
  • NTC Thermistor
    No
  • Gate-Emitter Voltage-Max
    20V
  • Input Capacitance (Cies) @ Vce
    18.6nF @ 25V
  • VCEsat-Max
    2.2 V
  • RoHS Status
    RoHS Compliant
Description
APTGL325DA120D3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGL325DA120D3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGL325DA120D3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGL325DA120D3G More Descriptions
Trans IGBT Module N-CH 1.2KV 420A 11-Pin Case D-3
IGBT MODULE 1200V 420A 1500W D3
Product Comparison
The three parts on the right have similar specifications to APTGL325DA120D3G.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Input
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Input Capacitance
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    NTC Thermistor
    Gate-Emitter Voltage-Max
    Input Capacitance (Cies) @ Vce
    VCEsat-Max
    RoHS Status
    Max Operating Temperature
    Min Operating Temperature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Element Configuration
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Radiation Hardening
    Lead Free
    View Compare
  • APTGL325DA120D3G
    APTGL325DA120D3G
    22 Weeks
    Chassis Mount, Screw
    Chassis Mount
    D-3 Module
    11
    SILICON
    -40°C~175°C TJ
    2012
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Insulated Gate BIP Transistors
    1.5kW
    UPPER
    UNSPECIFIED
    11
    R-XUFM-X5
    1
    Single
    ISOLATED
    1500W
    MOTOR CONTROL
    N-CHANNEL
    Standard
    1.2kV
    420A
    5mA
    1.2kV
    1200V
    18.6nF
    270 ns
    2.2V @ 15V, 300A
    530 ns
    Trench Field Stop
    No
    20V
    18.6nF @ 25V
    2.2 V
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • APTGF150A120T3WG
    -
    Chassis Mount, Screw
    Chassis Mount
    SP3
    18
    -
    -
    2009
    Obsolete
    1 (Unlimited)
    9
    EAR99
    Insulated Gate BIP Transistors
    961W
    UPPER
    UNSPECIFIED
    25
    R-XUFM-X9
    2
    Half Bridge
    ISOLATED
    -
    POWER CONTROL
    N-CHANNEL
    Standard
    1.2kV
    210A
    250μA
    1.2kV
    1200V
    9.3nF
    190 ns
    3.7V @ 15V, 150A
    390 ns
    NPT
    Yes
    20V
    9.3nF @ 25V
    3.7 V
    RoHS Compliant
    150°C
    -40°C
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    Dual
    -
    -
    -
    -
    -
  • APTGF25H120T1G
    -
    Chassis Mount, Screw
    Chassis Mount
    SP1
    12
    -
    -
    2007
    Obsolete
    1 (Unlimited)
    12
    EAR99
    Insulated Gate BIP Transistors
    208W
    UPPER
    UNSPECIFIED
    12
    -
    4
    Full Bridge Inverter
    ISOLATED
    -
    MOTOR CONTROL
    N-CHANNEL
    Standard
    1.2kV
    40A
    250μA
    1.2kV
    1200V
    1.65nF
    110 ns
    3.7V @ 15V, 25A
    386 ns
    NPT
    Yes
    20V
    1.65nF @ 25V
    3.7 V
    RoHS Compliant
    150°C
    -40°C
    -
    -
    -
    -
    e1
    yes
    TIN SILVER COPPER
    No
    Lead Free
  • APTGF100A1202G
    -
    Chassis Mount, Screw
    Chassis Mount
    SP2
    18
    -
    -
    2012
    Obsolete
    1 (Unlimited)
    -
    EAR99
    Insulated Gate BIP Transistors
    568W
    -
    -
    -
    -
    1
    Half Bridge
    -
    -
    -
    -
    Standard
    1.2kV
    135A
    250μA
    1.2kV
    1200V
    6.5nF
    -
    3.7V @ 15V, 100A
    -
    NPT
    No
    20V
    6.5nF @ 25V
    3.7 V
    RoHS Compliant
    150°C
    -40°C
    -
    -
    -
    Dual
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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