Microsemi Corporation APTGF50H60T1G
- Part Number:
- APTGF50H60T1G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3587147-APTGF50H60T1G
- Description:
- IGBT MODULE NPT FULL BRIDGE SP1
- Datasheet:
- APTGF50H60T1G
Microsemi Corporation APTGF50H60T1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGF50H60T1G.
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSP1
- Number of Pins12
- PackagingBulk
- Published2012
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations12
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation250W
- Terminal PositionUPPER
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count12
- Qualification StatusNot Qualified
- Number of Elements4
- ConfigurationFull Bridge Inverter
- Case ConnectionISOLATED
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current65A
- Current - Collector Cutoff (Max)250μA
- Collector Emitter Breakdown Voltage600V
- Input Capacitance2.2nF
- Turn On Time52 ns
- Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 50A
- Turn Off Time-Nom (toff)151 ns
- IGBT TypeNPT
- NTC ThermistorYes
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce2.2nF @ 25V
- VCEsat-Max2.45 V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
APTGF50H60T1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGF50H60T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGF50H60T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGF50H60T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGF50H60T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGF50H60T1G More Descriptions
Trans IGBT Module N-CH 600V 65A 12-Pin Case SP1
IGBT MODULE NPT FULL BRIDGE SP1
POWER IGBT TRANSISTOR
IGBT MODULE NPT FULL BRIDGE SP1
POWER IGBT TRANSISTOR
The three parts on the right have similar specifications to APTGF50H60T1G.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageInput CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorGate-Emitter Voltage-MaxInput Capacitance (Cies) @ VceVCEsat-MaxRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Element ConfigurationView Compare
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APTGF50H60T1GChassis Mount, ScrewChassis MountSP112Bulk2012e1yesObsolete1 (Unlimited)12EAR99TIN SILVER COPPER150°C-40°CInsulated Gate BIP Transistors250WUPPERTHROUGH-HOLENOT SPECIFIEDNOT SPECIFIED12Not Qualified4Full Bridge InverterISOLATEDMOTOR CONTROLN-CHANNELStandard600V65A250μA600V2.2nF52 ns2.45V @ 15V, 50A151 nsNPTYes20V2.2nF @ 25V2.45 VRoHS CompliantLead Free----
-
Chassis Mount, ScrewChassis MountSP65-2012e1yesObsolete1 (Unlimited)5EAR99TIN SILVER COPPER150°C-40°CInsulated Gate BIP Transistors1.78kWUPPERUNSPECIFIED--5-1SingleISOLATEDMOTOR CONTROLN-CHANNELStandard1.2kV400A500μA1.2kV21nF190 ns3.9V @ 15V, 300A400 nsNPTNo20V21nF @ 25V3.9 VRoHS Compliant-1780W1200V-
-
Chassis Mount, ScrewChassis MountSP112-2012--Obsolete1 (Unlimited)-EAR99-150°C-40°CInsulated Gate BIP Transistors140W------1Three Level Inverter---Standard600V42A250μA600V1.35nF-2.45V @ 15V, 30A-NPTNo20V1.35nF @ 25V2.45 VRoHS Compliant----
-
Chassis Mount, ScrewChassis MountSP218-2012--Obsolete1 (Unlimited)-EAR99-150°C-40°CInsulated Gate BIP Transistors568W------1Half Bridge---Standard1.2kV135A250μA1.2kV6.5nF-3.7V @ 15V, 100A-NPTNo20V6.5nF @ 25V3.7 VRoHS Compliant--1200VDual
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