APTGF50DH120TG

Microsemi Corporation APTGF50DH120TG

Part Number:
APTGF50DH120TG
Manufacturer:
Microsemi Corporation
Ventron No:
2854355-APTGF50DH120TG
Description:
IGBT MODULE NPT ASYM BRIDGE SP4
ECAD Model:
Datasheet:
APTGF50DH120TG

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Specifications
Microsemi Corporation APTGF50DH120TG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGF50DH120TG.
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    SP4
  • Number of Pins
    20
  • Published
    2012
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    14
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    312W
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    14
  • JESD-30 Code
    R-XUFM-X14
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    Asymmetrical Bridge
  • Element Configuration
    Dual
  • Case Connection
    ISOLATED
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    75A
  • Current - Collector Cutoff (Max)
    250μA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Input Capacitance
    3.45nF
  • Turn On Time
    100 ns
  • Vce(on) (Max) @ Vge, Ic
    3.7V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    400 ns
  • IGBT Type
    NPT
  • NTC Thermistor
    Yes
  • Input Capacitance (Cies) @ Vce
    3.45nF @ 25V
  • VCEsat-Max
    3.7 V
  • RoHS Status
    RoHS Compliant
Description
APTGF50DH120TG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGF50DH120TG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGF50DH120TG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGF50DH120TG More Descriptions
Trans IGBT Module N-CH 1.2KV 75A 20-Pin Case SP4
IGBT MODULE NPT ASYM BRIDGE SP4
IGBT MODULE 1200V 75A 312W SP4
Product Comparison
The three parts on the right have similar specifications to APTGF50DH120TG.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Element Configuration
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Input
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Input Capacitance
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    NTC Thermistor
    Input Capacitance (Cies) @ Vce
    VCEsat-Max
    RoHS Status
    Power - Max
    Radiation Hardening
    Lead Free
    Gate-Emitter Voltage-Max
    View Compare
  • APTGF50DH120TG
    APTGF50DH120TG
    Chassis Mount, Screw
    Chassis Mount
    SP4
    20
    2012
    e1
    yes
    Obsolete
    1 (Unlimited)
    14
    EAR99
    TIN SILVER COPPER
    150°C
    -40°C
    Insulated Gate BIP Transistors
    312W
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    14
    R-XUFM-X14
    Not Qualified
    2
    Asymmetrical Bridge
    Dual
    ISOLATED
    POWER CONTROL
    N-CHANNEL
    Standard
    1.2kV
    75A
    250μA
    1.2kV
    1200V
    3.45nF
    100 ns
    3.7V @ 15V, 50A
    400 ns
    NPT
    Yes
    3.45nF @ 25V
    3.7 V
    RoHS Compliant
    -
    -
    -
    -
    -
  • APTGF150A120T3AG
    Chassis Mount, Screw
    Chassis Mount
    SP3
    20
    -
    -
    -
    Obsolete
    1 (Unlimited)
    10
    EAR99
    -
    150°C
    -40°C
    Insulated Gate BIP Transistors
    1.041kW
    UPPER
    UNSPECIFIED
    -
    -
    25
    R-XUFM-X10
    -
    2
    Half Bridge
    Dual
    ISOLATED
    POWER CONTROL
    N-CHANNEL
    Standard
    1.2kV
    210A
    250μA
    1.2kV
    1200V
    9.3nF
    190 ns
    3.7V @ 15V, 150A
    390 ns
    NPT
    Yes
    9.3nF @ 25V
    3.7 V
    RoHS Compliant
    1041W
    No
    Lead Free
    -
  • APTGF350DU60G
    Chassis Mount, Screw
    Chassis Mount
    SP6
    7
    2012
    e1
    yes
    Obsolete
    1 (Unlimited)
    7
    EAR99
    TIN SILVER COPPER
    150°C
    -40°C
    Insulated Gate BIP Transistors
    1.562kW
    UPPER
    UNSPECIFIED
    -
    -
    7
    -
    -
    2
    Dual, Common Source
    Dual
    ISOLATED
    POWER CONTROL
    N-CHANNEL
    Standard
    600V
    430A
    200μA
    600V
    -
    17.2nF
    51 ns
    2.5V @ 15V, 360A
    210 ns
    NPT
    No
    17.2nF @ 25V
    2.5 V
    RoHS Compliant
    1562W
    -
    -
    20V
  • APTGF30TL601G
    Chassis Mount, Screw
    Chassis Mount
    SP1
    12
    2012
    -
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    150°C
    -40°C
    Insulated Gate BIP Transistors
    140W
    -
    -
    -
    -
    -
    -
    -
    1
    Three Level Inverter
    -
    -
    -
    -
    Standard
    600V
    42A
    250μA
    600V
    -
    1.35nF
    -
    2.45V @ 15V, 30A
    -
    NPT
    No
    1.35nF @ 25V
    2.45 V
    RoHS Compliant
    -
    -
    -
    20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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