Microsemi Corporation APTGF50DH120TG
- Part Number:
- APTGF50DH120TG
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2854355-APTGF50DH120TG
- Description:
- IGBT MODULE NPT ASYM BRIDGE SP4
- Datasheet:
- APTGF50DH120TG
Microsemi Corporation APTGF50DH120TG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGF50DH120TG.
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSP4
- Number of Pins20
- Published2012
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations14
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation312W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count14
- JESD-30 CodeR-XUFM-X14
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationAsymmetrical Bridge
- Element ConfigurationDual
- Case ConnectionISOLATED
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current75A
- Current - Collector Cutoff (Max)250μA
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Input Capacitance3.45nF
- Turn On Time100 ns
- Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 50A
- Turn Off Time-Nom (toff)400 ns
- IGBT TypeNPT
- NTC ThermistorYes
- Input Capacitance (Cies) @ Vce3.45nF @ 25V
- VCEsat-Max3.7 V
- RoHS StatusRoHS Compliant
APTGF50DH120TG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGF50DH120TG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGF50DH120TG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGF50DH120TG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGF50DH120TG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGF50DH120TG More Descriptions
Trans IGBT Module N-CH 1.2KV 75A 20-Pin Case SP4
IGBT MODULE NPT ASYM BRIDGE SP4
IGBT MODULE 1200V 75A 312W SP4
IGBT MODULE NPT ASYM BRIDGE SP4
IGBT MODULE 1200V 75A 312W SP4
The three parts on the right have similar specifications to APTGF50DH120TG.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationElement ConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Input CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorInput Capacitance (Cies) @ VceVCEsat-MaxRoHS StatusPower - MaxRadiation HardeningLead FreeGate-Emitter Voltage-MaxView Compare
-
APTGF50DH120TGChassis Mount, ScrewChassis MountSP4202012e1yesObsolete1 (Unlimited)14EAR99TIN SILVER COPPER150°C-40°CInsulated Gate BIP Transistors312WUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIED14R-XUFM-X14Not Qualified2Asymmetrical BridgeDualISOLATEDPOWER CONTROLN-CHANNELStandard1.2kV75A250μA1.2kV1200V3.45nF100 ns3.7V @ 15V, 50A400 nsNPTYes3.45nF @ 25V3.7 VRoHS Compliant-----
-
Chassis Mount, ScrewChassis MountSP320---Obsolete1 (Unlimited)10EAR99-150°C-40°CInsulated Gate BIP Transistors1.041kWUPPERUNSPECIFIED--25R-XUFM-X10-2Half BridgeDualISOLATEDPOWER CONTROLN-CHANNELStandard1.2kV210A250μA1.2kV1200V9.3nF190 ns3.7V @ 15V, 150A390 nsNPTYes9.3nF @ 25V3.7 VRoHS Compliant1041WNoLead Free-
-
Chassis Mount, ScrewChassis MountSP672012e1yesObsolete1 (Unlimited)7EAR99TIN SILVER COPPER150°C-40°CInsulated Gate BIP Transistors1.562kWUPPERUNSPECIFIED--7--2Dual, Common SourceDualISOLATEDPOWER CONTROLN-CHANNELStandard600V430A200μA600V-17.2nF51 ns2.5V @ 15V, 360A210 nsNPTNo17.2nF @ 25V2.5 VRoHS Compliant1562W--20V
-
Chassis Mount, ScrewChassis MountSP1122012--Obsolete1 (Unlimited)-EAR99-150°C-40°CInsulated Gate BIP Transistors140W-------1Three Level Inverter----Standard600V42A250μA600V-1.35nF-2.45V @ 15V, 30A-NPTNo1.35nF @ 25V2.45 VRoHS Compliant---20V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 December 2023
LM358DR Dual Operational Amplifier Characteristics, Applications, LM358DR vs LM358S
Ⅰ. LM358DR descriptionⅡ. Pin configuration of LM358DRⅢ. What are the characteristics of LM358DR?Ⅳ. How to adjust the gain setting of the LM358DR chip?Ⅴ. Schematic diagram of LM358DRⅥ. What... -
26 December 2023
An Overview of BAV99 Switching Diode
Ⅰ. What is a switching diode?Ⅱ. Introduction of BAV99Ⅲ. What are the functions of BAV99 diode?Ⅳ. Typical characteristics of BAV99 diodeⅤ. Technical parameters of BAV99 diodeⅥ. How to... -
27 December 2023
Everything You Need to Know About STM8S003F3P6TR Microcontroller
Ⅰ. Overview of STM8S003F3P6TRⅡ. Structure of STM8S003F3P6TR microcontrollerⅢ. Package of STM8S003F3P6TR microcontrollerⅣ. STM8S003F3P6TR priceⅤ. Advantages and application scenarios of STM8S003F3P6TRⅥ. STM8S003F3P6TR specificationsⅦ. What are the characteristics of STM8S003F3P6TR... -
27 December 2023
Applications and Usage of IR2011STRPBF Isolated Gate Driver
Ⅰ. What is a gate driver?Ⅱ. Introduction to IR2011STRPBFⅢ. Dimensions and package of IR2011STRPBFⅣ. Technical parameters of IR2011STRPBFⅤ. Who produces the IR2011STRPBF?Ⅵ. Absolute maximum ratings of IR2011STRPBFⅦ. Where...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.