APT50GT120JRDQ2

Microsemi Corporation APT50GT120JRDQ2

Part Number:
APT50GT120JRDQ2
Manufacturer:
Microsemi Corporation
Ventron No:
3071961-APT50GT120JRDQ2
Description:
IGBT 1200V 72A 379W SOT227
ECAD Model:
Datasheet:
APT50GT120JRDQ2

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Specifications
Microsemi Corporation APT50GT120JRDQ2 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT50GT120JRDQ2.
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    ISOTOP
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Series
    Thunderbolt IGBT®
  • Published
    2005
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    UL RECOGNIZED, HIGH RELIABILITY
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    379W
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Current Rating
    110A
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    Single
  • Case Connection
    ISOLATED
  • Power - Max
    379W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    3.7V
  • Max Collector Current
    72A
  • Current - Collector Cutoff (Max)
    400μA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Input Capacitance
    2.5nF
  • Turn On Time
    73 ns
  • Vce(on) (Max) @ Vge, Ic
    3.7V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    305 ns
  • IGBT Type
    NPT
  • NTC Thermistor
    No
  • Gate-Emitter Voltage-Max
    30V
  • Input Capacitance (Cies) @ Vce
    2.5nF @ 25V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT50GT120JRDQ2 Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APT50GT120JRDQ2 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT50GT120JRDQ2. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT50GT120JRDQ2 More Descriptions
IGBT NPT Medium Frequency Combi 1200 V 50 A SOT-227 4 SOT-227 TUBE RoHS Compliant: Yes
Transistor IGBT Chip N-Channel 1200V 72A Screw Mount
Insulated Gate Bipolar Transistor - NPT Standard Speed
IGBT MOD 1200V 72A 379W ISOTOP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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