Alpha & Omega Semiconductor Inc. AO4404B
- Part Number:
- AO4404B
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2850067-AO4404B
- Description:
- MOSFET N-CH 30V 8.5A 8-SOIC
- Datasheet:
- AO4404B
Alpha & Omega Semiconductor Inc. AO4404B technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4404B.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.1W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.1W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs24m Ω @ 8.5A, 10V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8.5A Ta
- Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±12V
- Continuous Drain Current (ID)8.5A
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.03Ohm
- DS Breakdown Voltage-Min30V
- Feedback Cap-Max (Crss)70 pF
- RoHS StatusROHS3 Compliant
AO4404B Overview
A device's maximal input capacitance is 1100pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8.5A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 10V).
AO4404B Features
a continuous drain current (ID) of 8.5A
a 30V drain to source voltage (Vdss)
AO4404B Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4404B applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 1100pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8.5A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 10V).
AO4404B Features
a continuous drain current (ID) of 8.5A
a 30V drain to source voltage (Vdss)
AO4404B Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4404B applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
AO4404B More Descriptions
MOSFET N-CH 30V 8.5A 8-SOIC
30V 8.5A 3.1W 24mΩ@10V,8.5A N Channel SOP-8 MOSFETs ROHS
30V N-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
30V 8.5A 3.1W 24mΩ@10V,8.5A N Channel SOP-8 MOSFETs ROHS
30V N-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
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