Microchip Technology 47C16T-I/SN
- Part Number:
- 47C16T-I/SN
- Manufacturer:
- Microchip Technology
- Ventron No:
- 3719578-47C16T-I/SN
- Description:
- IC EERAM 16KBIT 1MHZ 8SOIC
- Datasheet:
- 47C16T-I/SN
Microchip Technology 47C16T-I/SN technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology 47C16T-I/SN.
- Factory Lead Time29 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3
- Number of Terminations8
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureIT ALSO HAS EEPROM BACKUP OF 2K X 8 BITS
- TechnologyEEPROM, SRAM
- Voltage - Supply4.5V~5.5V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage5V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)40
- Base Part Number47C16
- JESD-30 CodeR-PDSO-G8
- Supply Voltage-Max (Vsup)5.5V
- Supply Voltage-Min (Vsup)4.5V
- Memory Size16Kb 2K x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency1MHz
- Access Time400ns
- Memory FormatEERAM
- Memory InterfaceI2C
- Organization2KX8
- Memory Width8
- Write Cycle Time - Word, Page1ms
- Memory Density16384 bit
- Screening LevelTS 16949
- Height Seated (Max)1.75mm
- Length4.9mm
- Width3.9mm
- RoHS StatusROHS3 Compliant
47C16T-I/SN Overview
This product boasts a wide operating temperature range of -40°C to 85°C, making it suitable for use in a variety of environments. It has been classified as meeting the JESD-609 Code e3 standard, ensuring its reliability and quality. The product is currently active and in production. Its terminal finish is a matte tin (Sn) that has been annealed, providing a durable and corrosion-resistant surface. This technology combines both EEPROM and SRAM, offering the benefits of non-volatile memory with the speed and flexibility of SRAM. The memory format is EERAM, with a write cycle time of 1ms for both words and pages. With a memory density of 16384 bits, this product is compact and efficient. It has a maximum seated height of 1.75mm and a length of 4.9mm, making it suitable for use in space-constrained applications.
47C16T-I/SN Features
Package / Case: 8-SOIC (0.154, 3.90mm Width)
Additional Feature:IT ALSO HAS EEPROM BACKUP OF 2K X 8 BITS
47C16T-I/SN Applications
There are a lot of Microchip Technology 47C16T-I/SN Memory applications.
Cache memory
DVD disk buffer
printers
servers
eSRAM
personal digital assistants
hard disk drive (HDD)
data buffer
multimedia computers
personal computers
This product boasts a wide operating temperature range of -40°C to 85°C, making it suitable for use in a variety of environments. It has been classified as meeting the JESD-609 Code e3 standard, ensuring its reliability and quality. The product is currently active and in production. Its terminal finish is a matte tin (Sn) that has been annealed, providing a durable and corrosion-resistant surface. This technology combines both EEPROM and SRAM, offering the benefits of non-volatile memory with the speed and flexibility of SRAM. The memory format is EERAM, with a write cycle time of 1ms for both words and pages. With a memory density of 16384 bits, this product is compact and efficient. It has a maximum seated height of 1.75mm and a length of 4.9mm, making it suitable for use in space-constrained applications.
47C16T-I/SN Features
Package / Case: 8-SOIC (0.154, 3.90mm Width)
Additional Feature:IT ALSO HAS EEPROM BACKUP OF 2K X 8 BITS
47C16T-I/SN Applications
There are a lot of Microchip Technology 47C16T-I/SN Memory applications.
Cache memory
DVD disk buffer
printers
servers
eSRAM
personal digital assistants
hard disk drive (HDD)
data buffer
multimedia computers
personal computers
47C16T-I/SN More Descriptions
Serial EERAM, 16K bits (x8), 1 MHz, 4.5 to 5.5V, -40 to 125°C, SOIC-8, RoHSMicrochip SCT
16K, 5.0V Eeram Ind 8 Soic 3.90Mm(.150In) T/R Rohs Compliant: Yes |Microchip 47C16T-I/SN
16kbit SRAM with EEPROM backup, 4.5-5.5V
Memory Circuit, EEPROM SRAM, 2KX8, CMOS, PDSO8
IC EERAM 16KBIT I2C 1MHZ 8SOIC
NVRAM, EERAM, 16KBIT, -40 TO 85DEG C;
16K, 5.0V Eeram Ind 8 Soic 3.90Mm(.150In) T/R Rohs Compliant: Yes |Microchip 47C16T-I/SN
16kbit SRAM with EEPROM backup, 4.5-5.5V
Memory Circuit, EEPROM SRAM, 2KX8, CMOS, PDSO8
IC EERAM 16KBIT I2C 1MHZ 8SOIC
NVRAM, EERAM, 16KBIT, -40 TO 85DEG C;
The three parts on the right have similar specifications to 47C16T-I/SN.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityScreening LevelHeight Seated (Max)LengthWidthRoHS StatusView Compare
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47C16T-I/SN29 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~85°C TATape & Reel (TR)e3Active38Matte Tin (Sn) - annealedIT ALSO HAS EEPROM BACKUP OF 2K X 8 BITSEEPROM, SRAM4.5V~5.5VDUAL26015V1.27mm4047C16R-PDSO-G85.5V4.5V16Kb 2K x 8Non-VolatileSYNCHRONOUS1MHz400nsEERAMI2C2KX881ms16384 bitTS 169491.75mm4.9mm3.9mmROHS3 Compliant-
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-Surface MountDie--40°C~85°C TATray-Active1 (Unlimited)---EEPROM, SRAM4.5V~5.5V------47C16---16Kb 2K x 8Non-Volatile-1MHz400nsEERAMI2C--1ms-----ROHS3 Compliant
-
6 WeeksSurface Mount8-TSSOP (0.173, 4.40mm Width)YES-40°C~125°C TATape & Reel (TR)e3Active18Matte Tin (Sn) - annealedIT ALSO HAS EEPROM BACKUP OF 2K X 8 BITSEEPROM, SRAM4.5V~5.5VDUAL26015V0.65mm4047C16R-PDSO-G85.5V4.5V16Kb 2K x 8Non-VolatileSYNCHRONOUS1MHz400nsEERAMI2C2KX881ms16384 bitTS 169491.2mm4.4mm3mmROHS3 Compliant
-
29 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~125°C TATape & Reel (TR)e3Active38Matte Tin (Sn) - annealed-EEPROM, SRAM4.5V~5.5VDUAL26015V1.27mm4047C16R-PDSO-G85.5V4.5V16Kb 2K x 8Non-VolatileSYNCHRONOUS1MHz400nsEERAMI2C2KX881ms16384 bit-1.75mm4.9mm3.9mmROHS3 Compliant
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