Microchip Technology 47C16T-E/SN
- Part Number:
- 47C16T-E/SN
- Manufacturer:
- Microchip Technology
- Ventron No:
- 3231226-47C16T-E/SN
- Description:
- IC EERAM 16KBIT 1MHZ 8SOIC
- Datasheet:
- 47C16T-E/SN
Microchip Technology 47C16T-E/SN technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology 47C16T-E/SN.
- Factory Lead Time29 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3
- Number of Terminations8
- Terminal FinishMatte Tin (Sn) - annealed
- TechnologyEEPROM, SRAM
- Voltage - Supply4.5V~5.5V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage5V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)40
- Base Part Number47C16
- JESD-30 CodeR-PDSO-G8
- Supply Voltage-Max (Vsup)5.5V
- Supply Voltage-Min (Vsup)4.5V
- Memory Size16Kb 2K x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency1MHz
- Access Time400ns
- Memory FormatEERAM
- Memory InterfaceI2C
- Organization2KX8
- Memory Width8
- Write Cycle Time - Word, Page1ms
- Memory Density16384 bit
- Height Seated (Max)1.75mm
- Length4.9mm
- Width3.9mm
- RoHS StatusROHS3 Compliant
47C16T-E/SN Overview
This particular component is manufactured by Microchip Technology and falls under the Memory category. It is a Memory chip with a JESD-609 Code of e3 and a Terminal Position of DUAL. The maximum supply voltage for this chip is 5.5V and the minimum supply voltage is 4.5V. It has a Memory Size of 16Kb, specifically 2K x 8. The Memory Format is EERAM and it has an I2C Memory Interface. The Organization of this chip is 2KX8, meaning it has a total of 2K words with 8 bits per word. The Write Cycle Time for this chip is 1ms for both Word and Page. Its Memory Density is 16384 bits.
47C16T-E/SN Features
Package / Case: 8-SOIC (0.154, 3.90mm Width)
47C16T-E/SN Applications
There are a lot of Microchip Technology 47C16T-E/SN Memory applications.
servers
Cache memory
printers
embedded logic
hard disk drive (HDD)
workstations,
personal computers
nonvolatile BIOS memory
mainframes
networking
This particular component is manufactured by Microchip Technology and falls under the Memory category. It is a Memory chip with a JESD-609 Code of e3 and a Terminal Position of DUAL. The maximum supply voltage for this chip is 5.5V and the minimum supply voltage is 4.5V. It has a Memory Size of 16Kb, specifically 2K x 8. The Memory Format is EERAM and it has an I2C Memory Interface. The Organization of this chip is 2KX8, meaning it has a total of 2K words with 8 bits per word. The Write Cycle Time for this chip is 1ms for both Word and Page. Its Memory Density is 16384 bits.
47C16T-E/SN Features
Package / Case: 8-SOIC (0.154, 3.90mm Width)
47C16T-E/SN Applications
There are a lot of Microchip Technology 47C16T-E/SN Memory applications.
servers
Cache memory
printers
embedded logic
hard disk drive (HDD)
workstations,
personal computers
nonvolatile BIOS memory
mainframes
networking
47C16T-E/SN More Descriptions
Serial EERAM, 16K bits (x8), 1 MHz, 4.5 to 5.5V, -40 to 125°C, SOIC-8, RoHSMicrochip SCT
16K, 5.0V Eeram Ext 8 Soic 3.90Mm(.150In) T/R Rohs Compliant: Yes |Microchip 47C16T-E/SN
16kbit SRAM with EEPROM backup, 4.5-5.5V
IC EERAM 16KBIT I2C 1MHZ 8SOIC
Memory Circuit, 2KX8, CMOS, PDSO8
NVRAM, EERAM, 16KBIT, -40 TO 125DEG C;
16K, 5.0V Eeram Ext 8 Soic 3.90Mm(.150In) T/R Rohs Compliant: Yes |Microchip 47C16T-E/SN
16kbit SRAM with EEPROM backup, 4.5-5.5V
IC EERAM 16KBIT I2C 1MHZ 8SOIC
Memory Circuit, 2KX8, CMOS, PDSO8
NVRAM, EERAM, 16KBIT, -40 TO 125DEG C;
The three parts on the right have similar specifications to 47C16T-E/SN.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityHeight Seated (Max)LengthWidthRoHS StatusView Compare
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47C16T-E/SN29 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~125°C TATape & Reel (TR)e3Active38Matte Tin (Sn) - annealedEEPROM, SRAM4.5V~5.5VDUAL26015V1.27mm4047C16R-PDSO-G85.5V4.5V16Kb 2K x 8Non-VolatileSYNCHRONOUS1MHz400nsEERAMI2C2KX881ms16384 bit1.75mm4.9mm3.9mmROHS3 Compliant-
-
-Surface MountDie--40°C~85°C TATray-Active1 (Unlimited)--EEPROM, SRAM4.5V~5.5V------47C16---16Kb 2K x 8Non-Volatile-1MHz400nsEERAMI2C--1ms----ROHS3 Compliant
-
-Surface MountDie--40°C~85°C TATray-Active1 (Unlimited)--EEPROM, SRAM4.5V~5.5V------47C16---16Kb 2K x 8Non-Volatile-1MHz400nsEERAMI2C--1ms----ROHS3 Compliant
-
29 WeeksSurface Mount8-TSSOP (0.173, 4.40mm Width)YES-40°C~85°C TATape & Reel (TR)e3Active18Matte Tin (Sn) - annealedEEPROM, SRAM4.5V~5.5VDUAL26015V0.65mm4047C16R-PDSO-G85.5V4.5V16Kb 2K x 8Non-VolatileSYNCHRONOUS1MHz400nsEERAMI2C2KX881ms16384 bit1.2mm4.4mm3mmROHS3 Compliant
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