Part Number: IRL3713PBF vs IRL3202PBF
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| Part Number: | IRL3713PBF | IRL3202PBF |
| Manufacturer: | Infineon Technologies | Infineon Technologies |
| Description: | MOSFET N-CH 30V 260A TO-220AB | MOSFET N-CH 20V 48A TO-220AB |
| Quantity Available: | Available | Available |
| Datasheets: | - | IRL3202PbF |
| Factory Lead Time | 14 Weeks | - |
| Contact Plating | Tin | - |
| Mount | Through Hole | Through Hole |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Pins | 3 | 3 |
| Transistor Element Material | SILICON | - |
| Operating Temperature | -55°C~175°C TJ | -55°C~150°C TJ |
| Packaging | Tube | Tube |
| Series | HEXFET® | HEXFET® |
| Published | 2003 | 2004 |
| Part Status | Not For New Designs | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 3 | - |
| ECCN Code | EAR99 | - |
| Resistance | 3mOhm | - |
| Additional Feature | AVALANCHE RATED | - |
| Subcategory | FET General Purpose Power | - |
| Voltage - Rated DC | 30V | 20V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Current Rating | 250A | 48A |
| Number of Elements | 1 | - |
| Power Dissipation-Max | 330W Tc | 69W Tc |
| Element Configuration | Single | Single |
| Operating Mode | ENHANCEMENT MODE | - |
| Power Dissipation | 200W | 69W |
| Case Connection | DRAIN | - |
| Turn On Delay Time | 16 ns | 8.5 ns |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | - |
| Rds On (Max) @ Id, Vgs | 3m Ω @ 38A, 10V | 16mOhm @ 29A, 7V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5890pF @ 15V | 2000pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 260A Tc | 48A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 4.5V | 43nC @ 4.5V |
| Rise Time | 160ns | 100ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 4.5V 7V |
| Vgs (Max) | ±20V | ±10V |
| Fall Time (Typ) | 57 ns | 82 ns |
| Turn-Off Delay Time | 40 ns | 12 ns |
| Continuous Drain Current (ID) | 260A | 48A |
| Threshold Voltage | 2.5V | - |
| JEDEC-95 Code | TO-220AB | - |
| Gate to Source Voltage (Vgs) | 20V | 10V |
| Drain Current-Max (Abs) (ID) | 75A | - |
| Drain to Source Breakdown Voltage | 30V | 20V |
| Dual Supply Voltage | 30V | - |
| Nominal Vgs | 2.5 V | 700 mV |
| Height | 9.017mm | 15.24mm |
| Length | 10.6426mm | 10.5156mm |
| Width | 4.82mm | 4.69mm |
| REACH SVHC | No SVHC | No SVHC |
| Radiation Hardening | No | - |
| RoHS Status | ROHS3 Compliant | RoHS Compliant |
| Lead Free | Lead Free | Lead Free |
| Supplier Device Package | - | TO-220AB |
| Max Operating Temperature | - | 150°C |
| Min Operating Temperature | - | -55°C |
| Drain to Source Voltage (Vdss) | - | 20V |
| Input Capacitance | - | 2nF |
| Recovery Time | - | 100 ns |
| Drain to Source Resistance | - | 19mOhm |
| Rds On Max | - | 16 mΩ |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
IRL3202 | IR | Compare | |
|
IRL3202S | IR | Compare | |
|
IRL3202SPBF | VB | Compare | |
|
IRL3202L | Vishay Siliconix | MOSFET N-CH 20V 48A TO-262 | Compare |
|
IRL3202S | Infineon Technologies | MOSFET N-CH 20V 48A D2PAK | Compare |
