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IRL3713PBF

Infineon Technologies IRL3713PBF

Part Number:
IRL3713PBF
Manufacturer:
Infineon Technologies
Ventron No:
4539019-IRL3713PBF
Description:
MOSFET N-CH 30V 260A TO-220AB
ECAD Model:
Datasheet:
IRL3713PBF

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Specifications
Infineon Technologies IRL3713PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3713PBF.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    3mOhm
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    250A
  • Number of Elements
    1
  • Power Dissipation-Max
    330W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    200W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3m Ω @ 38A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5890pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    260A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 4.5V
  • Rise Time
    160ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    57 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    260A
  • Threshold Voltage
    2.5V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Nominal Vgs
    2.5 V
  • Height
    9.017mm
  • Length
    10.6426mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRL3713PBF    Description     Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.  
IRL3713PBF     Applications
High FrequencyIsolated DC-DC Converters with Synchronous Rectification for Telecom andIndustrial Use High Frequency Buck Converters for Computer Processor Power 100% RGTested   IRL3713PBF     Features
Ultra-Low Gate lmpedance Very Low Rds(on)at 4.5VVGS Fully Characterized Avalanche Voltage and Current Lead-Free

IRL3713PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
Trans MOSFET N-CH 30V 260A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N, 30V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Product Comparison
The three parts on the right have similar specifications to IRL3713PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Recovery Time
    View Compare
  • IRL3713PBF
    IRL3713PBF
    Infineon Technologies
    14 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    3mOhm
    AVALANCHE RATED
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    250A
    1
    330W Tc
    Single
    ENHANCEMENT MODE
    200W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    3m Ω @ 38A, 10V
    2.5V @ 250μA
    5890pF @ 15V
    260A Tc
    110nC @ 4.5V
    160ns
    4.5V 10V
    ±20V
    57 ns
    40 ns
    260A
    2.5V
    TO-220AB
    20V
    75A
    30V
    30V
    2.5 V
    9.017mm
    10.6426mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL3502PBF
    IRL3502PBF
    Infineon Technologies
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~150°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    20V
    MOSFET (Metal Oxide)
    110A
    1
    140W Tc
    Single
    -
    140W
    -
    10 ns
    N-Channel
    -
    7mOhm @ 64A, 7V
    700mV @ 250μA
    4700pF @ 15V
    110A Tc
    110nC @ 4.5V
    140ns
    4.5V 7V
    ±10V
    130 ns
    96 ns
    110A
    -
    -
    10V
    -
    20V
    -
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    TO-220AB
    150°C
    -55°C
    20V
    4.7nF
    8mOhm
    7 mΩ
    -
    IRL3713PBF vs IRL3502PBF
  • IRL3202PBF
    IRL3202PBF
    Infineon Technologies
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~150°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    20V
    MOSFET (Metal Oxide)
    48A
    -
    69W Tc
    Single
    -
    69W
    -
    8.5 ns
    N-Channel
    -
    16mOhm @ 29A, 7V
    700mV @ 250μA
    2000pF @ 15V
    48A Tc
    43nC @ 4.5V
    100ns
    4.5V 7V
    ±10V
    82 ns
    12 ns
    48A
    -
    -
    10V
    -
    20V
    -
    700 mV
    15.24mm
    10.5156mm
    4.69mm
    No SVHC
    -
    RoHS Compliant
    Lead Free
    TO-220AB
    150°C
    -55°C
    20V
    2nF
    19mOhm
    16 mΩ
    100 ns
    IRL3713PBF vs IRL3202PBF
  • IRL3502SPBF
    IRL3502SPBF
    Infineon Technologies
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~150°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    20V
    MOSFET (Metal Oxide)
    110A
    -
    140W Tc
    Single
    -
    140W
    -
    10 ns
    N-Channel
    -
    7mOhm @ 64A, 7V
    700mV @ 250μA
    4700pF @ 15V
    110A Tc
    110nC @ 4.5V
    140ns
    4.5V 7V
    ±10V
    130 ns
    96 ns
    110A
    -
    -
    10V
    -
    20V
    -
    -
    4.83mm
    10.67mm
    9.65mm
    -
    No
    RoHS Compliant
    Lead Free
    D2PAK
    150°C
    -55°C
    20V
    4.7nF
    7mOhm
    7 mΩ
    -
    IRL3713PBF vs IRL3502SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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