Infineon Technologies IRL3713PBF
- Part Number:
- IRL3713PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 4539019-IRL3713PBF
- Description:
- MOSFET N-CH 30V 260A TO-220AB
- Datasheet:
- IRL3713PBF
Infineon Technologies IRL3713PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3713PBF.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance3mOhm
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating250A
- Number of Elements1
- Power Dissipation-Max330W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation200W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3m Ω @ 38A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5890pF @ 15V
- Current - Continuous Drain (Id) @ 25°C260A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
- Rise Time160ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)57 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)260A
- Threshold Voltage2.5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Nominal Vgs2.5 V
- Height9.017mm
- Length10.6426mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRL3713PBF Description
Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.
IRL3713PBF Applications
High FrequencyIsolated DC-DC Converters with Synchronous Rectification for Telecom andIndustrial Use High Frequency Buck Converters for Computer Processor Power 100% RGTested IRL3713PBF Features
Ultra-Low Gate lmpedance Very Low Rds(on)at 4.5VVGS Fully Characterized Avalanche Voltage and Current Lead-Free
IRL3713PBF Applications
High FrequencyIsolated DC-DC Converters with Synchronous Rectification for Telecom andIndustrial Use High Frequency Buck Converters for Computer Processor Power 100% RGTested IRL3713PBF Features
Ultra-Low Gate lmpedance Very Low Rds(on)at 4.5VVGS Fully Characterized Avalanche Voltage and Current Lead-Free
IRL3713PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
Trans MOSFET N-CH 30V 260A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N, 30V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
Trans MOSFET N-CH 30V 260A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N, 30V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
The three parts on the right have similar specifications to IRL3713PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxRecovery TimeView Compare
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IRL3713PBF14 WeeksTinThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2003Not For New Designs1 (Unlimited)3EAR993mOhmAVALANCHE RATEDFET General Purpose Power30VMOSFET (Metal Oxide)250A1330W TcSingleENHANCEMENT MODE200WDRAIN16 nsN-ChannelSWITCHING3m Ω @ 38A, 10V2.5V @ 250μA5890pF @ 15V260A Tc110nC @ 4.5V160ns4.5V 10V±20V57 ns40 ns260A2.5VTO-220AB20V75A30V30V2.5 V9.017mm10.6426mm4.82mmNo SVHCNoROHS3 CompliantLead Free---------
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--Through HoleThrough HoleTO-220-33--55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)-----20VMOSFET (Metal Oxide)110A1140W TcSingle-140W-10 nsN-Channel-7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V140ns4.5V 7V±10V130 ns96 ns110A--10V-20V------NoRoHS CompliantLead FreeTO-220AB150°C-55°C20V4.7nF8mOhm7 mΩ-
-
--Through HoleThrough HoleTO-220-33--55°C~150°C TJTubeHEXFET®2004Obsolete1 (Unlimited)-----20VMOSFET (Metal Oxide)48A-69W TcSingle-69W-8.5 nsN-Channel-16mOhm @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V100ns4.5V 7V±10V82 ns12 ns48A--10V-20V-700 mV15.24mm10.5156mm4.69mmNo SVHC-RoHS CompliantLead FreeTO-220AB150°C-55°C20V2nF19mOhm16 mΩ100 ns
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)-----20VMOSFET (Metal Oxide)110A-140W TcSingle-140W-10 nsN-Channel-7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V140ns4.5V 7V±10V130 ns96 ns110A--10V-20V--4.83mm10.67mm9.65mm-NoRoHS CompliantLead FreeD2PAK150°C-55°C20V4.7nF7mOhm7 mΩ-
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