Part Number: NTB13N10G vs NTB125N02RT4G

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Part Number: NTB13N10G NTB125N02RT4G
Manufacturer: ON Semiconductor ON Semiconductor
Description: MOSFET N-CH 100V 13A D2PAK MOSFET N-CH 24V 15.9A D2PAK
Quantity Available: Available Available
Datasheets: - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads Tab), TO-263AB TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount YES -
Transistor Element Material SILICON SILICON
Operating Temperature -55°C~175°C TJ -55°C~150°C TJ
Packaging Tube Tape & Reel (TR)
JESD-609 Code e3 e3
Pbfree Code no yes
Part Status Obsolete Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 2 2
Terminal Finish MATTE TIN Tin (Sn)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Terminal Position SINGLE -
Terminal Form GULL WING GULL WING
Peak Reflow Temperature (Cel) 260 260
Reach Compliance Code unknown -
Time@Peak Reflow Temperature-Max (s) 30 30
Pin Count 3 3
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Qualification Status COMMERCIAL Not Qualified
Number of Elements 1 1
Configuration SINGLE WITH BUILT-IN DIODE -
Power Dissipation-Max 64.7W Ta 1.98W Ta 113.6W Tc
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Case Connection DRAIN DRAIN
FET Type N-Channel N-Channel
Transistor Application SWITCHING SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 6.5A, 10V 4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V 3440pF @ 20V
Current - Continuous Drain (Id) @ 25°C 13A Ta 95A Ta 120.5A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V 28nC @ 4.5V
Drain to Source Voltage (Vdss) 100V -
Drive Voltage (Max Rds On,Min Rds On) 10V 4.5V 10V
Vgs (Max) ±20V ±20V
Drain Current-Max (Abs) (ID) 13A 95A
Drain-source On Resistance-Max 0.165Ohm 0.0062Ohm
Pulsed Drain Current-Max (IDM) 39A 250A
DS Breakdown Voltage-Min 100V -
Avalanche Energy Rating (Eas) 85 mJ 120 mJ
RoHS Status ROHS3 Compliant RoHS Compliant
Lifecycle Status - OBSOLETE (Last Updated: 4 days ago)
Mount - Surface Mount
Number of Pins - 3
Published - 2006
HTS Code - 8541.29.00.95
Subcategory - FET General Purpose Power
Voltage - Rated DC - 24V
Current Rating - 125A
Element Configuration - Single
Power Dissipation - 2.72W
Rise Time - 39ns
Fall Time (Typ) - 21 ns
Turn-Off Delay Time - 27 ns
Continuous Drain Current (ID) - 125A
JEDEC-95 Code - TO-220AB
Gate to Source Voltage (Vgs) - 20V
Drain to Source Breakdown Voltage - 24V
Lead Free - Lead Free
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