Part Number: NVMFS5C430NLWFT3G vs NVMFS5C404NLWFAFT1G

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Part Number: NVMFS5C430NLWFT3G NVMFS5C404NLWFAFT1G
Manufacturer: ON Semiconductor ON Semiconductor
Description: MOSFET N-CH 40V 200A SO8FL T6 40V HEFET
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago) ACTIVE (Last Updated: 1 hour ago)
Factory Lead Time 38 Weeks 11 Weeks
Mount Surface Mount -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN, 5 Leads
Number of Pins 8 -
Transistor Element Material SILICON -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2015 -
JESD-609 Code e3 e3
Pbfree Code yes yes
Part Status Discontinued Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 5 -
Terminal Finish Tin (Sn) Tin (Sn)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Terminal Position DUAL -
Terminal Form FLAT -
Reach Compliance Code not_compliant not_compliant
Reference Standard AEC-Q101 -
JESD-30 Code R-PDSO-F5 -
Number of Elements 1 -
Configuration SINGLE WITH BUILT-IN DIODE -
Power Dissipation-Max 3.8W Ta 110W Tc 200W Tc
Operating Mode ENHANCEMENT MODE -
Case Connection DRAIN -
FET Type N-Channel N-Channel
Rds On (Max) @ Id, Vgs 1.5m Ω @ 50A, 10V 0.67m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 20V 12168pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V 81nC @ 4.5V
Drain to Source Voltage (Vdss) 40V 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V 4.5V 10V
Vgs (Max) ±20V ±20V
Drain-source On Resistance-Max 0.0022Ohm -
Pulsed Drain Current-Max (IDM) 900A -
DS Breakdown Voltage-Min 40V -
Avalanche Energy Rating (Eas) 493 mJ -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free -
Series - Automotive, AEC-Q101
Peak Reflow Temperature (Cel) - 260
Time@Peak Reflow Temperature-Max (s) - 10
Current - Continuous Drain (Id) @ 25°C - 370A Tc
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