Part Number: IXGP20N100 vs IXGP12N120A2

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Part Number: IXGP20N100 IXGP12N120A2
Manufacturer: IXYS IXYS
Description: IGBT 1000V 40A 150W TO220 IGBT 1200V 24A 75W TO220
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 8 Weeks 16 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Number of Pins 3 3
Weight 2.299997g 2.299997g
Transistor Element Material SILICON SILICON
Operating Temperature -55°C~150°C TJ -55°C~150°C TJ
Packaging Tube Tube
Published 2003 2004
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 3
Subcategory Insulated Gate BIP Transistors -
Max Power Dissipation 150W 75W
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Part Number IXG*20N100 IXG*12N120
Pin Count 3 3
Qualification Status Not Qualified Not Qualified
Number of Elements 1 1
Element Configuration Single Single
Case Connection COLLECTOR COLLECTOR
Input Type Standard Standard
Power - Max 150W 75W
Transistor Application MOTOR CONTROL POWER CONTROL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV 1.2kV
Max Collector Current 40A 24A
JEDEC-95 Code TO-220AB TO-220AB
Collector Emitter Breakdown Voltage 1kV 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1000V 1200V
Collector Emitter Saturation Voltage 3V -
Turn On Time 60 ns 45 ns
Test Condition 800V, 20A, 47 Ω, 15V 960V, 12A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A 3V @ 15V, 12A
Turn Off Time-Nom (toff) 1220 ns 1750 ns
IGBT Type PT PT
Gate Charge 73nC 24nC
Current - Collector Pulsed (Icm) 80A 48A
Td (on/off) @ 25°C 30ns/350ns 15ns/680ns
Switching Energy 3.5mJ (off) 5.4mJ (off)
Gate-Emitter Voltage-Max 20V -
Gate-Emitter Thr Voltage-Max 5V -
Fall Time-Max (tf) 700ns -
RoHS Status ROHS3 Compliant ROHS3 Compliant
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