| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
FDPC8012S |
FDPC5018SG |
| Manufacturer: |
Fairchild/ON Semiconductor |
Fairchild/ON Semiconductor |
| Description: |
MOSFET 2N-CH 25V 13A/26A PWR CLP |
MOSFET 2N-CH 30V PWRCLIP56 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Lifecycle Status |
ACTIVE (Last Updated: 3 days ago) |
ACTIVE (Last Updated: 3 days ago) |
| Factory Lead Time |
12 Weeks |
23 Weeks |
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
8-PowerWDFN |
8-PowerWDFN |
| Number of Pins |
8 |
8 |
| Weight |
192mg |
207.7333mg |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Series |
PowerTrench® |
PowerTrench® |
| Published |
2010 |
- |
| JESD-609 Code |
e3 |
e3 |
| Pbfree Code |
yes |
yes |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
8 |
8 |
| ECCN Code |
EAR99 |
EAR99 |
| Terminal Finish |
Tin (Sn) |
Tin (Sn) |
| Subcategory |
FET General Purpose Power |
- |
| Max Power Dissipation |
2W |
1.1W |
| Number of Elements |
2 |
2 |
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Power - Max |
800mW 900mW |
1W 1.1W |
| FET Type |
2 N-Channel (Dual) Asymmetrical |
2 N-Channel (Dual) Asymmetrical |
| Transistor Application |
SWITCHING |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7m Ω @ 12A, 4.5V |
5m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1075pF @ 13V |
1715pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
13A 26A |
17A 32A |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 4.5V |
24nC @ 10V |
| Rise Time |
3ns |
- |
| Fall Time (Typ) |
3 ns |
- |
| Turn-Off Delay Time |
34 ns |
- |
| Continuous Drain Current (ID) |
88A |
32A |
| JEDEC-95 Code |
MO-240BA |
- |
| Gate to Source Voltage (Vgs) |
12V |
- |
| Drain Current-Max (Abs) (ID) |
13A |
17A |
| Drain-source On Resistance-Max |
0.007Ohm |
0.005Ohm |
| Drain to Source Breakdown Voltage |
25V |
- |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| FET Feature |
Logic Level Gate |
Standard |
| Height |
725μm |
- |
| Length |
3.3mm |
- |
| Width |
3.3mm |
- |
| Radiation Hardening |
No |
- |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Terminal Form |
- |
NO LEAD |
| Peak Reflow Temperature (Cel) |
- |
260 |
| Reach Compliance Code |
- |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
- |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
- |
30V |
| DS Breakdown Voltage-Min |
- |
30V |
| Feedback Cap-Max (Crss) |
- |
60 pF |
| Submit RFQ: |
Submit |
Submit |
