Part Number: CY14B104L-BA45XIT vs CY14B116N-BA25XIT

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Part Number: CY14B104L-BA45XIT CY14B116N-BA25XIT
Manufacturer: Cypress Semiconductor Corp Cypress Semiconductor Corp
Description: IC NVSRAM 4MBIT 45NS 48FBGA Memory IC 18mm mm
Quantity Available: Available Available
Datasheets: CY14B104L/N -
Factory Lead Time 13 Weeks 26 Weeks
Mounting Type Surface Mount Surface Mount
Package / Case 48-TFBGA 60-LFBGA
Surface Mount YES YES
Operating Temperature -40°C~85°C TA -40°C~85°C TA
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2007 -
JESD-609 Code e1 -
Part Status Obsolete Active
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
Number of Terminations 48 60
ECCN Code 3A991.B.2.A 3A991.A.2
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) -
HTS Code 8542.32.00.41 8542.90.00.00
Subcategory SRAMs -
Technology NVSRAM (Non-Volatile SRAM) NVSRAM (Non-Volatile SRAM)
Voltage - Supply 2.7V~3.6V 2.7V~3.6V
Terminal Position BOTTOM BOTTOM
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Number of Functions 1 1
Supply Voltage 3V 3V
Terminal Pitch 0.75mm 0.75mm
Reach Compliance Code unknown -
Time@Peak Reflow Temperature-Max (s) 20 NOT SPECIFIED
Base Part Number CY14B104 -
Pin Count 48 -
JESD-30 Code R-PBGA-B48 R-PBGA-B60
Qualification Status Not Qualified -
Supply Voltage-Max (Vsup) 3.6V 3.6V
Power Supplies 3/3.3V -
Supply Voltage-Min (Vsup) 2.7V 2.7V
Memory Size 4Mb 512K x 8 16Mb 1M x 16
Memory Type Non-Volatile Non-Volatile
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Supply Current-Max 0.052mA -
Memory Format NVSRAM NVSRAM
Memory Interface Parallel Parallel
Organization 512KX8 1MX16
Memory Width 8 16
Write Cycle Time - Word, Page 45ns 25ns
Standby Current-Max 0.005A -
Memory Density 4194304 bit 16777216 bit
Access Time (Max) 45 ns 25 ns
Height Seated (Max) 1.2mm 1.2mm
Length 10mm 18mm
Width 6mm 10mm
RoHS Status ROHS3 Compliant ROHS3 Compliant
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