Part Number: CY14B104LA-ZS25XI vs CY14B116N-BA25XIT

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Part Number: CY14B104LA-ZS25XI CY14B116N-BA25XIT
Manufacturer: Cypress Semiconductor Corp Cypress Semiconductor Corp
Description: IC NVSRAM 4MBIT 25NS 44TSOP Memory IC 18mm mm
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 14 Weeks 26 Weeks
Contact Plating Gold, Tin -
Mount Surface Mount -
Mounting Type Surface Mount Surface Mount
Package / Case 44-TSOP (0.400, 10.16mm Width) 60-LFBGA
Number of Pins 44 -
Operating Temperature -40°C~85°C TA -40°C~85°C TA
Packaging Tube Tape & Reel (TR)
Published 2011 -
JESD-609 Code e4 -
Part Status Active Active
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
Number of Terminations 44 60
ECCN Code 3A991.B.2.A 3A991.A.2
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au) -
HTS Code 8542.32.00.41 8542.90.00.00
Subcategory SRAMs -
Technology NVSRAM (Non-Volatile SRAM) NVSRAM (Non-Volatile SRAM)
Voltage - Supply 2.7V~3.6V 2.7V~3.6V
Terminal Position DUAL BOTTOM
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Number of Functions 1 1
Supply Voltage 3V 3V
Terminal Pitch 0.8mm 0.75mm
Reflow Temperature-Max (s) 30 -
Base Part Number CY14B104 -
Pin Count 44 -
Operating Supply Voltage 3V -
Supply Voltage-Max (Vsup) 3.6V 3.6V
Supply Voltage-Min (Vsup) 2.7V 2.7V
Memory Size 4Mb 512K x 8 16Mb 1M x 16
Nominal Supply Current 70mA -
Memory Type Non-Volatile Non-Volatile
Memory Format NVSRAM NVSRAM
Memory Interface Parallel Parallel
Data Bus Width 8b -
Organization 512KX8 1MX16
Memory Width 8 16
Write Cycle Time - Word, Page 25ns 25ns
Density 4 Mb -
Standby Current-Max 0.005A -
Access Time (Max) 25 ns 25 ns
Word Size 8b -
Height Seated (Max) 1.194mm 1.2mm
Length 18.415mm 18mm
Radiation Hardening No -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free -
Surface Mount - YES
Time@Peak Reflow Temperature-Max (s) - NOT SPECIFIED
JESD-30 Code - R-PBGA-B60
Operating Mode - ASYNCHRONOUS
Memory Density - 16777216 bit
Width - 10mm
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