Sanken 2SB1383 technical specifications, attributes, parameters and parts with similar specifications to Sanken 2SB1383.
- Factory Lead Time24 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 0.04
- SubcategoryOther Transistors
- Max Power Dissipation120W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max120W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)1.8V
- Max Collector Current25A
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 12A 4V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.8V @ 24mA, 12A
- Collector Emitter Breakdown Voltage120V
- Transition Frequency50MHz
- Frequency - Transition50MHz
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2SB1383 Overview
This device has a DC current gain of 2000 @ 12A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.8V @ 24mA, 12A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 25A volts is possible.
2SB1383 Features
the DC current gain for this device is 2000 @ 12A 4V
the vce saturation(Max) is 1.8V @ 24mA, 12A
a transition frequency of 50MHz
2SB1383 Applications
There are a lot of Sanken
2SB1383 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 2000 @ 12A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.8V @ 24mA, 12A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 25A volts is possible.
2SB1383 Features
the DC current gain for this device is 2000 @ 12A 4V
the vce saturation(Max) is 1.8V @ 24mA, 12A
a transition frequency of 50MHz
2SB1383 Applications
There are a lot of Sanken
2SB1383 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SB1383 More Descriptions
Trans Darlington PNP 120V 25A 120000mW 3-Pin(3 Tab) TO-3P
3.3 V Half-duplex RS-485 Transceiver, 32Mbps 8-SOIC -40 to 85
TRANS PNP DARL 120V 25A TO3P
OEMs, CMs ONLY (NO BROKERS)
3.3 V Half-duplex RS-485 Transceiver, 32Mbps 8-SOIC -40 to 85
TRANS PNP DARL 120V 25A TO3P
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to 2SB1383.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionRoHS StatusLead FreeLifecycle StatusContact PlatingSurface MountNumber of PinsElement ConfigurationMax FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthCase ConnectionJEDEC-95 CodeSupplier Device PackageBase Part NumberVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageView Compare
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2SB138324 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-3SILICON150°C TJBulk2007e0yesActive1 (Unlimited)3EAR99BUILT IN BIAS RESISTANCE RATIO IS 0.04Other Transistors120WSINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE120WSWITCHINGPNPPNP - Darlington1.8V25A2000 @ 12A 4V10μA ICBO1.8V @ 24mA, 12A120V50MHz50MHzRoHS CompliantLead Free--------------------
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2 Weeks-Surface MountTO-243AA-150°C TJTape & Reel (TR)2010e6yesActive1 (Unlimited)-EAR99-Other Transistors500mW-NOT SPECIFIED-NOT SPECIFIED3------PNPPNP500mV1A100 @ 100mA 2V100nA ICBO500mV @ 50mA, 500mA50V-150MHzROHS3 CompliantLead FreeACTIVE (Last Updated: 4 days ago)TinYES3Single150MHz-500mV-60V-5V1.5mm4.5mm2.5mm-------
-
12 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON150°C TJBulk2007-yesActive1 (Unlimited)3EAR99BUILT IN BIAS RESISTANCE RATIO IS 0.325Other Transistors25WSINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE25WSWITCHINGPNPPNP - Darlington1.5V4A2000 @ 3A 4V10μA ICBO1.5V @ 6mA, 3A60V200MHz150MHzRoHS CompliantLead Free------------ISOLATEDTO-220AB-----
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-Surface MountSurface MountSC-85-150°C TJTape & Reel (TR)2007--Obsolete1 (Unlimited)----150mW---------150mW--PNP600mV500mA170 @ 150mA 10V100nA ICBO600mV @ 30mA, 300mA50V-200MHzRoHS Compliant----85----------SMini3-F22SB121950V500mA50V
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