SEME-LAB 2N5874 technical specifications, attributes, parameters and parts with similar specifications to SEME-LAB 2N5874.
- Factory Lead Time12 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Transistor Element MaterialSILICON
- PackagingBulk
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- HTS Code8541.29.00.95
- Max Power Dissipation90W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusNot Qualified
- Polarity/Channel TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current7A
- JEDEC-95 CodeTO-3
- DC Current Gain-Min (hFE)20
- RoHS StatusNon-RoHS Compliant
2N5874 Overview
A maximum collector current of 7A volts can be achieved.
2N5874 Features
2N5874 Applications
There are a lot of Microsemi Corporation
2N5874 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A maximum collector current of 7A volts can be achieved.
2N5874 Features
2N5874 Applications
There are a lot of Microsemi Corporation
2N5874 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5874 More Descriptions
Trans GP BJT NPN 80V 7A 3-Pin(2 Tab) TO-3
Bipolar Transistors - BJT Power BJT
Power Bjt To-3 Rohs Compliant: Yes |Microchip 2N5874
PNP POWER TRANSISTOR SILICON AMP
Bipolar Transistors - BJT Power BJT
Power Bjt To-3 Rohs Compliant: Yes |Microchip 2N5874
PNP POWER TRANSISTOR SILICON AMP
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