Fairchild/ON Semiconductor 2N5551TFR
- Part Number:
- 2N5551TFR
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068704-2N5551TFR
- Description:
- TRANS NPN 160V 0.6A TO-92
- ECAD Model:
-
- Datasheet:
- 2N5551TFR
Fairchild/ON Semiconductor 2N5551TFR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5551TFR.
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC160V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating600mA
- Frequency300MHz
- Base Part Number2N5551
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage160V
- Frequency - Transition100MHz
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)6V
- hFE Min80
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N5551TFR Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 600mA volts.
2N5551TFR Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551TFR Applications
There are a lot of ON Semiconductor
2N5551TFR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 600mA volts.
2N5551TFR Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551TFR Applications
There are a lot of ON Semiconductor
2N5551TFR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5551TFR More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Transistor General Purpose
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
2N5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92
Bipolar Transistors - BJT NPN Transistor General Purpose
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 T/R
2N5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92
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