Fairchild/ON Semiconductor 2N5551TA

Name: 2N5551TA
Brand: Fairchild/ON Semiconductor
SKU: 2463170-2N5551TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5551TA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463170-2N5551TA

Description:: TRANS NPN 160V 0.6A TO-92

ECAD Model:

Datasheet:: 2N5551TA

Specifications

Fairchild/ON Semiconductor 2N5551TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5551TA.

Factory Lead Time
17 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
160V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
600mA
Frequency
300MHz
Base Part Number
2N5551
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
160V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
80
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N5551TA Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 600mA volts is possible.

2N5551TA Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5551TA Applications
There are a lot of ON Semiconductor
2N5551TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5551TA More Descriptions

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
TRANS NPN 160V 0.6A TO-92 / Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors - BJT NPN Transistor General Purpose
160V 625mW 80@10mA,5V 600mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
2N5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92
TRANSISTOR, BIPOL, NPN, 160V, TO-92-3
Transistor, BIPOL, NPN, 160V, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:100MHz; Power
TRANSISTOR, BIPOL, NPN, 160V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

Certification