Part Number: IXGP24N60C vs IXGP12N100AU1
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Part Number: | IXGP24N60C | IXGP12N100AU1 |
Manufacturer: | IXYS | IXYS |
Description: | IGBT 600V 48A 150W TO220AB | IGBT 1000V 24A 100W TO220AB |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Mount | Through Hole | Through Hole |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Weight | 2.299997g | - |
Transistor Element Material | SILICON | SILICON |
Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
Packaging | Tube | Tube |
Series | HiPerFAST™, Lightspeed™ | - |
Published | 2002 | 2000 |
Pbfree Code | yes | yes |
Part Status | Obsolete | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Number of Terminations | 3 | 3 |
Max Power Dissipation | 150W | 100W |
Terminal Position | SINGLE | - |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | - |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | - |
Base Part Number | IXG*24N60 | IXG*12N100 |
Pin Count | 3 | 3 |
JESD-30 Code | R-PSFM-T3 | - |
Qualification Status | Not Qualified | - |
Number of Elements | 1 | 1 |
Configuration | SINGLE | - |
Case Connection | COLLECTOR | COLLECTOR |
Input Type | Standard | Standard |
Power - Max | 150W | 100W |
Transistor Application | MOTOR CONTROL | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.5V | 1kV |
Max Collector Current | 48A | 24A |
JEDEC-95 Code | TO-220AB | TO-220AB |
Collector Emitter Breakdown Voltage | 600V | 1kV |
Turn On Time | 40 ns | 100 ns |
Test Condition | 480V, 24A, 10 Ω, 15V | 800V, 12A, 120 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 24A | 4V @ 15V, 12A |
Turn Off Time-Nom (toff) | 240 ns | 900 ns |
Gate Charge | 55nC | 65nC |
Current - Collector Pulsed (Icm) | 96A | 48A |
Td (on/off) @ 25°C | 15ns/75ns | 100ns/850ns |
Switching Energy | 240μJ (off) | 4mJ (off) |
RoHS Status | RoHS Compliant | RoHS Compliant |
Factory Lead Time | - | 8 Weeks |
Number of Pins | - | 3 |
Additional Feature | - | HIGH SPEED, FAST |
Subcategory | - | Insulated Gate BIP Transistors |
Element Configuration | - | Single |
Reverse Recovery Time | - | 60ns |
Voltage - Collector Emitter Breakdown (Max) | - | 1000V |
Gate-Emitter Voltage-Max | - | 20V |
Gate-Emitter Thr Voltage-Max | - | 5.5V |
Fall Time-Max (tf) | - | 700ns |
Radiation Hardening | - | No |
Submit RFQ: | Submit | Submit |