Part Number: STGW30V60DF vs STGW20NC60VD
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | STGW30V60DF | STGW20NC60VD |
| Manufacturer: | STMicroelectronics | STMicroelectronics |
| Description: | IGBT 600V 60A 258W TO247 | IGBT 600V 60A 200W TO247 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 20 Weeks | 8 Weeks |
| Mount | Through Hole | Through Hole |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Number of Pins | 3 | 3 |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~175°C TJ | -55°C~150°C TJ |
| Packaging | Tube | Tube |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 3 | 3 |
| ECCN Code | EAR99 | EAR99 |
| Max Power Dissipation | 258W | 200W |
| Base Part Number | STGW30 | STGW20 |
| Number of Elements | 1 | 1 |
| Element Configuration | Single | Single |
| Power Dissipation | 258W | 200W |
| Input Type | Standard | Standard |
| Transistor Application | POWER CONTROL | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V | 600V |
| Max Collector Current | 60A | 60A |
| Reverse Recovery Time | 53 ns | 44ns |
| Collector Emitter Breakdown Voltage | 600V | 600V |
| Collector Emitter Saturation Voltage | 2.35V | 2.5V |
| Turn On Time | 59 ns | 42.5 ns |
| Test Condition | 400V, 30A, 10 Ω, 15V | 390V, 20A, 3.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A | 2.5V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 225 ns | 280 ns |
| IGBT Type | Trench Field Stop | - |
| Gate Charge | 163nC | 100nC |
| Current - Collector Pulsed (Icm) | 120A | 150A |
| Td (on/off) @ 25°C | 45ns/189ns | 31ns/100ns |
| Switching Energy | 383μJ (on), 233μJ (off) | 220μJ (on), 330μJ (off) |
| Height | 20.15mm | 20.15mm |
| Length | 15.75mm | 15.75mm |
| Width | 5.15mm | 5.15mm |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lifecycle Status | - | ACTIVE (Last Updated: 8 months ago) |
| Weight | - | 38.000013g |
| Series | - | PowerMESH™ |
| JESD-609 Code | - | e3 |
| Terminal Finish | - | Tin (Sn) |
| Additional Feature | - | ULTRA FAST |
| Subcategory | - | Insulated Gate BIP Transistors |
| Voltage - Rated DC | - | 600V |
| Current Rating | - | 30A |
| Pin Count | - | 3 |
| Turn On Delay Time | - | 31 ns |
| Rise Time | - | 11.5ns |
| Turn-Off Delay Time | - | 100 ns |
| Continuous Collector Current | - | 30A |
| Gate-Emitter Voltage-Max | - | 20V |
| Gate-Emitter Thr Voltage-Max | - | 5.75V |
| REACH SVHC | - | No SVHC |
| Lead Free | - | Lead Free |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
STGW20NB60H | ST | Compare | |
|
STGW20N60DF | ST | Compare | |
|
STGW20NC60V | ST | Compare | |
|
STGW20N60D MGW20N60D | ST | Compare | |
|
STGW20NB60HD | ST | Compare | |
|
STGW20IH125DF | STMicroelectronics | IGBT 1250V 40A 259W TO-247 | Compare |
