Part Number: CSD18532Q5B vs CSD17484F4
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Part Number: | CSD18532Q5B | CSD17484F4 |
Manufacturer: | Texas Instruments | Texas Instruments |
Description: | 60-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm | 30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection |
Quantity Available: | Available | Available |
Datasheets: | csd18532q5b | csd17484f4 |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | ACTIVE (Last Updated: 1 day ago) |
Factory Lead Time | 8 Weeks | 6 Weeks |
Contact Plating | Tin | - |
Mount | Surface Mount | Surface Mount |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | 8-PowerTDFN | 3-XFDFN |
Number of Pins | 8 | 3 |
Transistor Element Material | SILICON | SILICON |
Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
Series | NexFET™ | FemtoFET™ |
JESD-609 Code | e3 | - |
Pbfree Code | yes | yes |
Part Status | Active | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Number of Terminations | 5 | 3 |
ECCN Code | EAR99 | EAR99 |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | - |
Subcategory | FET General Purpose Powers | - |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Terminal Position | DUAL | BOTTOM |
Terminal Form | NO LEAD | NO LEAD |
Peak Reflow Temperature (Cel) | 260 | - |
Reach Compliance Code | not_compliant | - |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | - |
Base Part Number | CSD18532 | CSD17484 |
Number of Elements | 1 | 1 |
Number of Channels | 1 | - |
Power Dissipation-Max | 3.2W Ta 156W Tc | 500mW Ta |
Element Configuration | Single | Single |
Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Power Dissipation | 3.2W | - |
Case Connection | DRAIN | - |
Turn On Delay Time | 5.8 ns | 3 ns |
FET Type | N-Channel | N-Channel |
Transistor Application | SWITCHING | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.2m Ω @ 25A, 10V | 121m Ω @ 500mA, 8V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA | 1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5070pF @ 30V | 195pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 100A Ta | 3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V | 1.2nC @ 4.5V |
Rise Time | 7.2ns | 1ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 1.8V 8V |
Vgs (Max) | ±20V | - |
Fall Time (Typ) | 3.1 ns | 4 ns |
Turn-Off Delay Time | 22 ns | 11 ns |
Continuous Drain Current (ID) | 23A | 3A |
Threshold Voltage | 1.5V | - |
Gate to Source Voltage (Vgs) | 20V | 12V |
Drain-source On Resistance-Max | 0.0043Ohm | 0.27Ohm |
Drain to Source Breakdown Voltage | 60V | - |
Pulsed Drain Current-Max (IDM) | 400A | - |
Avalanche Energy Rating (Eas) | 320 mJ | - |
Max Junction Temperature (Tj) | 150°C | - |
Height | 1.05mm | - |
Length | 5mm | 1.035mm |
Width | 6mm | 635μm |
Thickness | 950μm | 200μm |
REACH SVHC | No SVHC | - |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Lead Free | Contains Lead | Lead Free |
Pin Count | - | 3 |
Drain to Source Voltage (Vdss) | - | 30V |
Drain Current-Max (Abs) (ID) | - | 3A |
Feedback Cap-Max (Crss) | - | 2.9 pF |
Submit RFQ: | Submit | Submit |