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CSD18532Q5B

Texas Instruments CSD18532Q5B

Part Number:
CSD18532Q5B
Manufacturer:
Texas Instruments
Ventron No:
2478250-CSD18532Q5B
Description:
60-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm
ECAD Model:
Datasheet:
csd18532q5b

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Specifications
Texas Instruments CSD18532Q5B technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18532Q5B.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD18532
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.2W Ta 156W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.2m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5070pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    100A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    58nC @ 10V
  • Rise Time
    7.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.1 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    23A
  • Threshold Voltage
    1.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0043Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    400A
  • Avalanche Energy Rating (Eas)
    320 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • Thickness
    950μm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD18532Q5B Description
CSD18532Q5B emerges as an N-Channel NexFET? power MOSFET with ultra-low Qg and Qgd, and low thermal resistance. As a result, it is well suited for motor control, DC-DC conversion, synchronous rectification, and isolated converter primary-side switch.

CSD18532Q5B Features
Logic level
Ultra-low Qg and Qgd
Low-thermal resistance
Available in the Q5B package

CSD18532Q5B Applications
Motor control
DC-DC conversion
Secondary side synchronous rectifier
Isolated converter primary side switch
CSD18532Q5B More Descriptions
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R / MOSFET N-CH 60V 23A 8VSON
Mosfet, N Channel, 60V, 100A, 0.0025Ohm, Son-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0025Ohm; Transistor Mounting:Surface Mount; No. Of Pins:8Pins Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18532Q5B
Product Comparison
The three parts on the right have similar specifications to CSD18532Q5B.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Thickness
    REACH SVHC
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Pin Count
    Feedback Cap-Max (Crss)
    View Compare
  • CSD18532Q5B
    CSD18532Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD18532
    1
    1
    3.2W Ta 156W Tc
    Single
    ENHANCEMENT MODE
    3.2W
    DRAIN
    5.8 ns
    N-Channel
    SWITCHING
    3.2m Ω @ 25A, 10V
    2.2V @ 250μA
    5070pF @ 30V
    100A Ta
    58nC @ 10V
    7.2ns
    4.5V 10V
    ±20V
    3.1 ns
    22 ns
    23A
    1.5V
    20V
    0.0043Ohm
    60V
    400A
    320 mJ
    150°C
    1.05mm
    5mm
    6mm
    950μm
    No SVHC
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    CSD17576Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD17576
    1
    -
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    4.5V 10V
    ±20V
    3 ns
    23 ns
    100A
    -
    20V
    0.0029Ohm
    -
    400A
    -
    -
    -
    5mm
    6mm
    950μm
    -
    ROHS3 Compliant
    Contains Lead
    30V
    30A
    30V
    -
    -
    CSD18532Q5B vs CSD17576Q5BT
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17484
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    -
    12V
    0.27Ohm
    -
    -
    -
    -
    -
    1.035mm
    635μm
    200μm
    -
    ROHS3 Compliant
    Lead Free
    30V
    3A
    -
    3
    2.9 pF
    CSD18532Q5B vs CSD17484F4
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17382
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    1.8V 8V
    -
    -
    279 ns
    2.3A
    -
    10V
    -
    -
    -
    -
    150°C
    350μm
    1.035mm
    635μm
    -
    -
    ROHS3 Compliant
    Lead Free
    30V
    -
    -
    -
    -
    CSD18532Q5B vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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