| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
MRF6V12250HR3 |
MRF6V13250HSR5 |
| Manufacturer: |
NXP USA Inc. |
NXP USA Inc. |
| Description: |
FET RF 100V 1.03GHZ NI-780 |
FET RF 120V 1.3GHZ NI780S |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Package / Case |
SOT-957A |
NI-780S |
| Surface Mount |
YES |
YES |
| Transistor Element Material |
SILICON |
SILICON |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2010 |
2011 |
| Part Status |
Discontinued |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Not Applicable |
| Number of Terminations |
2 |
2 |
| ECCN Code |
EAR99 |
EAR99 |
| Voltage - Rated |
100V |
120V |
| HTS Code |
8541.29.00.75 |
8541.29.00.75 |
| Terminal Position |
DUAL |
DUAL |
| Terminal Form |
FLAT |
FLAT |
| Frequency |
1.03GHz |
1.3GHz |
| Base Part Number |
MRF6V12250 |
MRF6V13250 |
| JESD-30 Code |
R-CDFM-F2 |
R-CDFP-F2 |
| Number of Elements |
1 |
1 |
| Configuration |
SINGLE |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Case Connection |
SOURCE |
SOURCE |
| Current - Test |
100mA |
100mA |
| Polarity/Channel Type |
N-CHANNEL |
N-CHANNEL |
| Transistor Type |
LDMOS |
LDMOS |
| Gain |
20.3dB |
22.7dB |
| DS Breakdown Voltage-Min |
110V |
120V |
| Power - Output |
275W |
250W |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test |
50V |
50V |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Factory Lead Time |
- |
10 Weeks |
| Subcategory |
- |
FET General Purpose Power |
| Peak Reflow Temperature (Cel) |
- |
260 |
| Time@Peak Reflow Temperature-Max (s) |
- |
40 |
| Qualification Status |
- |
Not Qualified |
| Operating Temperature (Max) |
- |
225°C |
| Transistor Application |
- |
AMPLIFIER |
| Power Dissipation-Max (Abs) |
- |
476W |
| Submit RFQ: |
Submit |
Submit |
