NXP USA Inc. MRF6V12250HR3

Name: MRF6V12250HR3
Brand: NXP USA Inc.
SKU: 2477219-MRF6V12250HR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF6V12250HR3

Manufacturer:: NXP USA Inc.

Ventron No:: 2477219-MRF6V12250HR3

Description:: FET RF 100V 1.03GHZ NI-780

ECAD Model:

Datasheet:: MRF6V12250HR3

Specifications

NXP USA Inc. MRF6V12250HR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V12250HR3.

Package / Case
SOT-957A
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Voltage - Rated
100V
HTS Code
8541.29.00.75
Terminal Position
DUAL
Terminal Form
FLAT
Frequency
1.03GHz
Base Part Number
MRF6V12250
JESD-30 Code
R-CDFM-F2
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
100mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
20.3dB
DS Breakdown Voltage-Min
110V
Power - Output
275W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant

Description

MRF6V12250HR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6V12250HR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6V12250HR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MRF6V12250HR3 More Descriptions

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Trans RF MOSFET N-CH 100V 2-Pin Case 465-06 T/R
20.3 dB Compliant Screw 6.424994 g 1.03 GHz Halogen Free 275 W 100 mA
RF MOSFET Transistors VHV6 250W 50V NI780H

Product Comparison

The three parts on the right have similar specifications to MRF6V12250HR3.

Image

Part Number

Manufacturer

Package / Case

Surface Mount

Transistor Element Material

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Voltage - Rated

HTS Code

Terminal Position

Terminal Form

Frequency

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Case Connection

Current - Test

Polarity/Channel Type

Transistor Type

Gain

DS Breakdown Voltage-Min

Power - Output

FET Technology

Voltage - Test

RoHS Status

Factory Lead Time

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Temperature (Max)

Transistor Application

Power Dissipation-Max (Abs)

View Compare
MRF6V12250HR3

NXP USA Inc.

SOT-957A

YES

SILICON

Tape & Reel (TR)

2010

Discontinued

3 (168 Hours)

2

EAR99

100V

8541.29.00.75

DUAL

FLAT

1.03GHz

MRF6V12250

R-CDFM-F2

1

SINGLE

ENHANCEMENT MODE

SOURCE

100mA

N-CHANNEL

LDMOS

20.3dB

110V

275W

METAL-OXIDE SEMICONDUCTOR

50V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
MRF6V13250HSR5

NXP USA Inc.

NI-780S

YES

SILICON

Tape & Reel (TR)

2011

Active

Not Applicable

2

EAR99

120V

8541.29.00.75

DUAL

FLAT

1.3GHz

MRF6V13250

R-CDFP-F2

1

SINGLE

ENHANCEMENT MODE

SOURCE

100mA

N-CHANNEL

LDMOS

22.7dB

120V

250W

METAL-OXIDE SEMICONDUCTOR

50V

ROHS3 Compliant

10 Weeks

FET General Purpose Power

260

40

Not Qualified

225°C

AMPLIFIER

476W

MRF6V12250HR3 vs MRF6V13250HSR5
MRF6S19140HR3

NXP USA Inc.

NI-880

-

-

Tape & Reel (TR)

2007

Obsolete

3 (168 Hours)

-

EAR99

68V

-

-

-

1.93GHz~1.99GHz

MRF6S19140

-

-

-

-

-

1.15A

-

LDMOS

16dB

-

29W

-

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-

MRF6V12250HR3 vs MRF6S19140HR3
MRF6S24140HR3

NXP USA Inc.

NI-880

YES

SILICON

Tape & Reel (TR)

2012

Obsolete

3 (168 Hours)

2

EAR99

68V

8541.29.00.75

DUAL

FLAT

2.39GHz

MRF6S24140

R-CDFM-F2

1

SINGLE

ENHANCEMENT MODE

SOURCE

1.3A

N-CHANNEL

LDMOS

15.2dB

68V

28W

METAL-OXIDE SEMICONDUCTOR

28V

ROHS3 Compliant

-

-

260

40

Not Qualified

225°C

-

-

MRF6V12250HR3 vs MRF6S24140HR3