1N5408G

ON Semiconductor 1N5408G

Part Number:
1N5408G
Manufacturer:
ON Semiconductor
Ventron No:
2421539-1N5408G
Description:
DIODE GEN PURP 1KV 3A DO201AD
ECAD Model:
Datasheet:
1N5408G

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Specifications
ON Semiconductor 1N5408G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 1N5408G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    DO-201AA, DO-27, Axial
  • Number of Pins
    2
  • Supplier Device Package
    DO-201AD
  • Weight
    4.535924g
  • Packaging
    Bulk
  • Published
    2000
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Voltage - Rated DC
    1kV
  • Current Rating
    4A
  • Base Part Number
    1N5408
  • Polarity
    Standard
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    10μA @ 1000V
  • Output Current
    3A
  • Voltage - Forward (Vf) (Max) @ If
    1V @ 3A
  • Forward Current
    3A
  • Operating Temperature - Junction
    -65°C~150°C
  • Max Surge Current
    200A
  • Halogen Free
    Halogen Free
  • Voltage - DC Reverse (Vr) (Max)
    1000V
  • Breakdown Voltage
    1kV
  • Current - Average Rectified (Io)
    3A
  • Forward Voltage
    1.2V
  • Max Reverse Voltage (DC)
    1kV
  • Average Rectified Current
    3A
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    1kV
  • Peak Non-Repetitive Surge Current
    200A
  • Reverse Voltage
    1kV
  • Max Forward Surge Current (Ifsm)
    200A
  • Diameter
    5.3mm
  • Height
    9.5mm
  • Length
    9.4996mm
  • Width
    6.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
1N5408G Overview
An acceptable reverse voltage would be 1kV.As a result, this device has a rectified current of 3A volts on average.Phase diode rectifier is permissible for forward current to reach 3A.Fuse elements have an indefinite life expectancy of 4A, which is the maximum current that the fuse can carry for an indefinite period of time.There is no maximum value for 200A surge current.Based on the data charts in the datasheets, the peak reverse is 10μA.Diodes have a breakdown voltage 1kV, which is the maximum reverse voltage that can be applied without causing an exponential increase in their leakage current.

1N5408G Features
an average rectified current of 3A volts
a current rating of 4A
the peak reverse is 10μA
the breakdown voltage of a diode is 1kV


1N5408G Applications
There are a lot of ON Semiconductor
1N5408G applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5408G More Descriptions
Diode Standard Recovery Rectifier 1000V 3A 2-Pin DO-201AD T/R - Tape and Reel
Diode 1000 V 3A Through Hole DO-201AD
Rectifier, Standard, 3A, 1Kv, Do-201Ad; Repetitive Reverse Voltage Vrrm Max:1Kv; Forward Current If(Av):3A; Diode Configuration:Single; Forward Voltage Vf Max:1V; Reverse Recovery Time Trr Max:-; Forward Surge Current Ifsm Max:125A; Rohs Compliant: Yes |Taiwan Semiconductor 1N5408G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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