1N1190R

GeneSiC Semiconductor 1N1190R

Part Number:
1N1190R
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2430009-1N1190R
Description:
DIODE GEN PURP REV 600V 35A DO5
ECAD Model:
Datasheet:
1N1190R

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Specifications
GeneSiC Semiconductor 1N1190R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N1190R.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AB, DO-5, Stud
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    1N1190R
  • JESD-30 Code
    O-MUPM-D1
  • Operating Temperature (Max)
    190°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    10μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 35A
  • Case Connection
    ANODE
  • Forward Current
    35A
  • Operating Temperature - Junction
    -65°C~190°C
  • Max Surge Current
    595A
  • Application
    GENERAL PURPOSE
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    35A
  • Number of Phases
    1
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    600V
  • Reverse Voltage
    600V
  • RoHS Status
    RoHS Compliant
Description
1N1190R Overview
An acceptable reverse voltage would be 600V.As a result, this device has a rectified current of 35A volts on average.Phase diode rectifier is permissible for forward current to reach 35A.There is no maximum value for 595A surge current.Based on the data charts in the datasheets, the peak reverse is 10μA.

1N1190R Features
an average rectified current of 35A volts
the peak reverse is 10μA


1N1190R Applications
There are a lot of GeneSiC Semiconductor
1N1190R applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N1190R More Descriptions
600V 35A DO-5 Silicon Stud Rectifier - Standard Recovery (Reverse Configuration)
DIODE GEN PURP REV 600V 35A DO5
Standard Recovery - 600 V - 35 A
Rectifiers 600V 35A REV Leads Std. Recovery
Standard Recovery, 600V, 35A, Do-5; Repetitive Peak Reverse Voltage:600V; Average Forward Current:35A; Forward Voltage Max:1.2V; Diode Module Configuration:Single; Diode Case Style:Do-5; No. Of Pins:2Pins; Forward Surge Current:595A Rohs Compliant: Yes |Genesic Semiconductor 1N1190R
Product Comparison
The three parts on the right have similar specifications to 1N1190R.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Reverse Voltage
    RoHS Status
    Supplier Device Package
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    Natural Thermal Resistance
    Number of Pins
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Element Configuration
    Forward Voltage
    Peak Non-Repetitive Surge Current
    Max Forward Surge Current (Ifsm)
    Height
    Radiation Hardening
    View Compare
  • 1N1190R
    1N1190R
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    NOT SPECIFIED
    NOT SPECIFIED
    1N1190R
    O-MUPM-D1
    190°C
    1
    SINGLE
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    10μA @ 50V
    1.2V @ 35A
    ANODE
    35A
    -65°C~190°C
    595A
    GENERAL PURPOSE
    600V
    35A
    1
    10μA
    600V
    600V
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N1183A
    PRODUCTION (Last Updated: 5 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    -
    Bulk
    2010
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    1N1183
    -
    -
    -
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    10μA @ 50V
    1.1V @ 40A
    -
    40A
    -65°C~200°C
    800A
    -
    50V
    40A
    -
    10μA
    50V
    50V
    RoHS Compliant
    DO-203AB
    50V
    40A
    1.25 °C/W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N1189R
    PRODUCTION (Last Updated: 5 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    -
    -
    1N1189R
    O-MUPM-D1
    190°C
    1
    SINGLE
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    10μA @ 50V
    1.2V @ 35A
    ANODE
    35A
    -65°C~190°C
    595A
    GENERAL PURPOSE
    600V
    35A
    1
    10μA
    500V
    500V
    RoHS Compliant
    -
    -
    -
    0.25 °C/W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-1N1188
    -
    13 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AB, DO-5, Stud
    SILICON
    Bulk
    2008
    -
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    -
    -
    1N1188
    O-MUPM-D1
    -
    1
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    10mA @ 400V
    1.7V @ 110A
    CATHODE
    35A
    -65°C~190°C
    400A
    POWER
    400V
    35A
    1
    10mA
    400V
    400V
    ROHS3 Compliant
    -
    -
    -
    0.25 °C/W
    2
    e3
    EAR99
    Tin (Sn) - with Nickel (Ni) barrier
    190°C
    -65°C
    LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    Single
    1.7V
    400A
    500A
    36.9062mm
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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