Cypress Semiconductor Corp S29WS064RABBHI000
- Part Number:
- S29WS064RABBHI000
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7375928-S29WS064RABBHI000
- Description:
- WS-R Memory IC WS-R Series 11.6mm mm
- Datasheet:
- S29WS064RABBHI000
Cypress Semiconductor Corp S29WS064RABBHI000 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29WS064RABBHI000.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / Case84-VFBGA
- Surface MountYES
- Number of Pins84
- Operating Temperature-40°C~85°C TA
- PackagingTray
- SeriesWS-R
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- ECCN Code3A991.B.1.A
- Additional FeatureSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size64Mb 4M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Clock Frequency108MHz
- Access Time80ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization4MX16
- Memory Width16
- Write Cycle Time - Word, Page60ns
- Memory Density67108864 bit
- Programming Voltage1.8V
- Length11.6mm
- Height Seated (Max)1mm
- Width8mm
- RoHS StatusROHS3 Compliant
S29WS064RABBHI000 Overview
Non-Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 84-VFBGA case. There is an 64Mb 4M x 16 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 84 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.8V power supply. With a clock frequency of 108MHz, the memory rotates on its own. It is encased in an 84-pin package that contains this ic memory chip. While this memory chip features many merits, it also offers SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE for improving system performance. Among the WS-R series of memory devices, this part is essential for its applications. A programming voltage of 1.8V is needed to alter the state of certain nonvolatile memory arrays.
S29WS064RABBHI000 Features
Package / Case: 84-VFBGA
84 Pins
Additional Feature:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
S29WS064RABBHI000 Applications
There are a lot of Cypress Semiconductor Corp
S29WS064RABBHI000 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Non-Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 84-VFBGA case. There is an 64Mb 4M x 16 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 84 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.8V power supply. With a clock frequency of 108MHz, the memory rotates on its own. It is encased in an 84-pin package that contains this ic memory chip. While this memory chip features many merits, it also offers SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE for improving system performance. Among the WS-R series of memory devices, this part is essential for its applications. A programming voltage of 1.8V is needed to alter the state of certain nonvolatile memory arrays.
S29WS064RABBHI000 Features
Package / Case: 84-VFBGA
84 Pins
Additional Feature:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
S29WS064RABBHI000 Applications
There are a lot of Cypress Semiconductor Corp
S29WS064RABBHI000 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
S29WS064RABBHI000 More Descriptions
NOR Flash Parallel/Serial 1.8V 64M-bit 4M x 16 84-Pin VFBGA Tray
NOR Flash 64Mb 1.8V 108Mhz Parallel NOR Flash
NOR Flash 64Mb 1.8V 108Mhz Parallel NOR Flash
The three parts on the right have similar specifications to S29WS064RABBHI000.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchQualification StatusSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityProgramming VoltageLengthHeight Seated (Max)WidthRoHS StatusPublishedJESD-609 CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power SuppliesSupply Current-MaxStandby Current-MaxData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyBoot BlockCommon Flash InterfaceSubcategoryTerminal FormJESD-30 CodeOperating Temperature (Max)Operating Temperature (Min)Temperature GradeAccess Time (Max)Parallel/SerialMemory IC TypeView Compare
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S29WS064RABBHI00014 WeeksSurface Mount84-VFBGAYES84-40°C~85°C TATrayWS-RObsolete3 (168 Hours)843A991.B.1.ASYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE8542.32.00.51FLASH - NOR1.7V~1.95VBOTTOM11.8V0.8mmNot Qualified1.95V1.7V64Mb 4M x 16Non-VolatileASYNCHRONOUS108MHz80nsFLASHParallel4MX161660ns67108864 bit1.8V11.6mm1mm8mmROHS3 Compliant---------------------------
-
-Surface Mount84-VFBGAYES84-25°C~85°C TATrayWS-PLast Time Buy3 (168 Hours)843A991.B.1.ASYNCHRONOUS BURST MODE OPERATION POSSIBLE8542.32.00.51FLASH - NOR1.7V~1.95VBOTTOM11.8V0.8mmNot Qualified1.95V1.7V128Mb 8M x 16Non-VolatileASYNCHRONOUS104MHz80nsFLASHParallel8MX161660ns134217728 bit1.8V11.6mm1mm8mmROHS3 Compliant2015e1Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)260401.8V0.08mA0.000005AYESYESYES812616K64K8wordsYESBOTTOM/TOPYES---------
-
---YES--Bulk-Obsolete1 (Unlimited)84-SYNCHRONOUS BURST MODE OPERATION POSSIBLE-CMOS-BOTTOM11.8V0.8mmNot Qualified1.95V1.7V--ASYNCHRONOUS----8MX1616-134217728 bit1.8V11.6mm1mm8mmROHS3 Compliant-e1Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)--1.8V0.06mA0.000005AYESYESYES812616K64K--BOTTOM/TOPYESFlash MemoriesBALLR-PBGA-B8485°C-25°COTHER70 nsPARALLELFLASH
-
---YES--Bulk-Obsolete1 (Unlimited)84-SYNCHRONOUS BURST MODE OPERATION POSSIBLE-CMOS-BOTTOM11.8V0.8mm-1.95V1.7V--ASYNCHRONOUS----8MX1616-134217728 bit1.8V11.6mm1mm8mmROHS3 Compliant-e1Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)NOT SPECIFIEDNOT SPECIFIED-------------BALLR-PBGA-B8485°C-25°COTHER70 nsPARALLELFLASH
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