S29WS064RABBHI000

Cypress Semiconductor Corp S29WS064RABBHI000

Part Number:
S29WS064RABBHI000
Manufacturer:
Cypress Semiconductor Corp
Ventron No:
7375928-S29WS064RABBHI000
Description:
WS-R Memory IC WS-R Series 11.6mm mm
ECAD Model:
Datasheet:
S29WS064RABBHI000

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Specifications
Cypress Semiconductor Corp S29WS064RABBHI000 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29WS064RABBHI000.
  • Factory Lead Time
    14 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    84-VFBGA
  • Surface Mount
    YES
  • Number of Pins
    84
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Series
    WS-R
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    84
  • ECCN Code
    3A991.B.1.A
  • Additional Feature
    SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
  • HTS Code
    8542.32.00.51
  • Technology
    FLASH - NOR
  • Voltage - Supply
    1.7V~1.95V
  • Terminal Position
    BOTTOM
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • Qualification Status
    Not Qualified
  • Supply Voltage-Max (Vsup)
    1.95V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    64Mb 4M x 16
  • Memory Type
    Non-Volatile
  • Operating Mode
    ASYNCHRONOUS
  • Clock Frequency
    108MHz
  • Access Time
    80ns
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Organization
    4MX16
  • Memory Width
    16
  • Write Cycle Time - Word, Page
    60ns
  • Memory Density
    67108864 bit
  • Programming Voltage
    1.8V
  • Length
    11.6mm
  • Height Seated (Max)
    1mm
  • Width
    8mm
  • RoHS Status
    ROHS3 Compliant
Description
S29WS064RABBHI000 Overview
Non-Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 84-VFBGA case. There is an 64Mb 4M x 16 memory capacity on the chip. In this device, the memory is of the FLASH-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. As you can see from the diagram, the chip is planted with 84 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.8V power supply. With a clock frequency of 108MHz, the memory rotates on its own. It is encased in an 84-pin package that contains this ic memory chip. While this memory chip features many merits, it also offers SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE for improving system performance. Among the WS-R series of memory devices, this part is essential for its applications. A programming voltage of 1.8V is needed to alter the state of certain nonvolatile memory arrays.

S29WS064RABBHI000 Features
Package / Case: 84-VFBGA
84 Pins
Additional Feature:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE


S29WS064RABBHI000 Applications
There are a lot of Cypress Semiconductor Corp
S29WS064RABBHI000 Memory applications.


telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
S29WS064RABBHI000 More Descriptions
NOR Flash Parallel/Serial 1.8V 64M-bit 4M x 16 84-Pin VFBGA Tray
NOR Flash 64Mb 1.8V 108Mhz Parallel NOR Flash
Product Comparison
The three parts on the right have similar specifications to S29WS064RABBHI000.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Qualification Status
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Memory Type
    Operating Mode
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Memory Density
    Programming Voltage
    Length
    Height Seated (Max)
    Width
    RoHS Status
    Published
    JESD-609 Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power Supplies
    Supply Current-Max
    Standby Current-Max
    Data Polling
    Toggle Bit
    Command User Interface
    Number of Sectors/Size
    Sector Size
    Page Size
    Ready/Busy
    Boot Block
    Common Flash Interface
    Subcategory
    Terminal Form
    JESD-30 Code
    Operating Temperature (Max)
    Operating Temperature (Min)
    Temperature Grade
    Access Time (Max)
    Parallel/Serial
    Memory IC Type
    View Compare
  • S29WS064RABBHI000
    S29WS064RABBHI000
    14 Weeks
    Surface Mount
    84-VFBGA
    YES
    84
    -40°C~85°C TA
    Tray
    WS-R
    Obsolete
    3 (168 Hours)
    84
    3A991.B.1.A
    SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
    8542.32.00.51
    FLASH - NOR
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.8mm
    Not Qualified
    1.95V
    1.7V
    64Mb 4M x 16
    Non-Volatile
    ASYNCHRONOUS
    108MHz
    80ns
    FLASH
    Parallel
    4MX16
    16
    60ns
    67108864 bit
    1.8V
    11.6mm
    1mm
    8mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • S29WS128PABBFW000
    -
    Surface Mount
    84-VFBGA
    YES
    84
    -25°C~85°C TA
    Tray
    WS-P
    Last Time Buy
    3 (168 Hours)
    84
    3A991.B.1.A
    SYNCHRONOUS BURST MODE OPERATION POSSIBLE
    8542.32.00.51
    FLASH - NOR
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.8mm
    Not Qualified
    1.95V
    1.7V
    128Mb 8M x 16
    Non-Volatile
    ASYNCHRONOUS
    104MHz
    80ns
    FLASH
    Parallel
    8MX16
    16
    60ns
    134217728 bit
    1.8V
    11.6mm
    1mm
    8mm
    ROHS3 Compliant
    2015
    e1
    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
    260
    40
    1.8V
    0.08mA
    0.000005A
    YES
    YES
    YES
    8126
    16K64K
    8words
    YES
    BOTTOM/TOP
    YES
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • S29WS128N0PBFW012
    -
    -
    -
    YES
    -
    -
    Bulk
    -
    Obsolete
    1 (Unlimited)
    84
    -
    SYNCHRONOUS BURST MODE OPERATION POSSIBLE
    -
    CMOS
    -
    BOTTOM
    1
    1.8V
    0.8mm
    Not Qualified
    1.95V
    1.7V
    -
    -
    ASYNCHRONOUS
    -
    -
    -
    -
    8MX16
    16
    -
    134217728 bit
    1.8V
    11.6mm
    1mm
    8mm
    ROHS3 Compliant
    -
    e1
    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
    -
    -
    1.8V
    0.06mA
    0.000005A
    YES
    YES
    YES
    8126
    16K64K
    -
    -
    BOTTOM/TOP
    YES
    Flash Memories
    BALL
    R-PBGA-B84
    85°C
    -25°C
    OTHER
    70 ns
    PARALLEL
    FLASH
  • S29WS128N0LBFW010
    -
    -
    -
    YES
    -
    -
    Bulk
    -
    Obsolete
    1 (Unlimited)
    84
    -
    SYNCHRONOUS BURST MODE OPERATION POSSIBLE
    -
    CMOS
    -
    BOTTOM
    1
    1.8V
    0.8mm
    -
    1.95V
    1.7V
    -
    -
    ASYNCHRONOUS
    -
    -
    -
    -
    8MX16
    16
    -
    134217728 bit
    1.8V
    11.6mm
    1mm
    8mm
    ROHS3 Compliant
    -
    e1
    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    BALL
    R-PBGA-B84
    85°C
    -25°C
    OTHER
    70 ns
    PARALLEL
    FLASH
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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