Micron Technology Inc. MT53E256M32D2DS-053 WT:B
- Part Number:
- MT53E256M32D2DS-053 WT:B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374352-MT53E256M32D2DS-053 WT:B
- Description:
- Memory IC
- ECAD Model:
-
- Datasheet:
- MT53E256M32D2DS-053 WT:B
Micron Technology Inc. MT53E256M32D2DS-053 WT:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E256M32D2DS-053 WT:B.
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Operating Temperature-30°C~85°C
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply0.6V 1.1V
- Memory Size8Gb 256M x 32
- Memory TypeVolatile
- Clock Frequency1.866GHz
- Memory FormatDRAM
- RoHS StatusROHS3 Compliant
MT53E256M32D2DS-053 WT:B Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 200-WFBGA case. There is an 8Gb 256M x 32 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 0.6V 1.1V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. With a clock frequency of 1.866GHz, the memory rotates on its own.
MT53E256M32D2DS-053 WT:B Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-053 WT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 WT:B Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 200-WFBGA case. There is an 8Gb 256M x 32 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 0.6V 1.1V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. With a clock frequency of 1.866GHz, the memory rotates on its own.
MT53E256M32D2DS-053 WT:B Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-053 WT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 WT:B Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT53E256M32D2DS-053 WT:B More Descriptions
Active Volatile ROHS3Compliant DRAM ic memory -30C~85C 0.6V 1.1V 8Gb 256M x 32 1.866GHz
SDRAM, 256M X 32BIT, -25 TO 85DEG C; DRAM Memory Configuration: 256M x 32bit; Memory Case Style: WFBGA; No. of Pins: 200Pins; IC Interface Type: Parallel; Access Time: 535ps; Page Size: 2048Byte; Operating Temperature Min: -25°
DRAM, 256M X 32BIT, -30 TO 85DEG C; DRAM Type:Mobile LPDDR4; Memory Configuration:256M x 32bit; Clock Frequency Max:1.866GHz; IC Case / Package:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; IC Mounting:Surface Mount RoHS Compliant: Yes
SDRAM, 256M X 32BIT, -25 TO 85DEG C; DRAM Memory Configuration: 256M x 32bit; Memory Case Style: WFBGA; No. of Pins: 200Pins; IC Interface Type: Parallel; Access Time: 535ps; Page Size: 2048Byte; Operating Temperature Min: -25°
DRAM, 256M X 32BIT, -30 TO 85DEG C; DRAM Type:Mobile LPDDR4; Memory Configuration:256M x 32bit; Clock Frequency Max:1.866GHz; IC Case / Package:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; IC Mounting:Surface Mount RoHS Compliant: Yes
The three parts on the right have similar specifications to MT53E256M32D2DS-053 WT:B.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatRoHS StatusFactory Lead TimeSupplier Device PackageView Compare
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MT53E256M32D2DS-053 WT:BSurface Mount200-WFBGA-30°C~85°CTrayActive3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V8Gb 256M x 32Volatile1.866GHzDRAMROHS3 Compliant--- -
Surface Mount200-WFBGA-40°C~125°C TATape & Reel (TR)Obsolete3 (168 Hours)SDRAM - Mobile LPDDR41.1V8Gb 256M x 32Volatile1.6GHzDRAMROHS3 Compliant6 Weeks200-WFBGA (10x14.5)
-
Surface Mount200-WFBGA-40°C~95°C TCTrayActive-SDRAM - Mobile LPDDR41.1V8Gb 256M x 32Volatile1600MHzDRAM-13 Weeks-
-
Surface Mount200-WFBGA-40°C~95°C TCTrayActive-SDRAM - Mobile LPDDR41.1V16Gb 512M x 32Volatile1600MHzDRAM---
-
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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