Micron Technology Inc. MT53E256M32D2DS-053 AIT:B TR
- Part Number:
- MT53E256M32D2DS-053 AIT:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374432-MT53E256M32D2DS-053 AIT:B TR
- Description:
- Memory IC
- Datasheet:
- MT53E256M32D2DS-053 AIT:B TR
Micron Technology Inc. MT53E256M32D2DS-053 AIT:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E256M32D2DS-053 AIT:B TR.
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Operating Temperature-40°C~95°C
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply0.6V 1.1V
- Memory Size8Gb 256M x 32
- Memory TypeVolatile
- Clock Frequency1.866GHz
- Memory FormatDRAM
- RoHS StatusROHS3 Compliant
MT53E256M32D2DS-053 AIT:B TR Overview
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. Embedded in the 200-WFBGA case, memory ics is a single file. On the chip, there is an 8Gb 256M x 32 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~95°C, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V volts. The recommended mounting type for memory ics is Surface Mount. A clock frequency rotation within 1.866GHz is used for the ic memory chip to rotate data.
MT53E256M32D2DS-053 AIT:B TR Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-053 AIT:B TR Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 AIT:B TR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. Embedded in the 200-WFBGA case, memory ics is a single file. On the chip, there is an 8Gb 256M x 32 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -40°C~95°C, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V volts. The recommended mounting type for memory ics is Surface Mount. A clock frequency rotation within 1.866GHz is used for the ic memory chip to rotate data.
MT53E256M32D2DS-053 AIT:B TR Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-053 AIT:B TR Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 AIT:B TR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT53E256M32D2DS-053 AIT:B TR More Descriptions
DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256M X 32 1.1V/1.8V 200-Pin WFBGA T/R
DRAM DRAM LPDDR4 256MX32 WFBGA AIT
IC DRAM 8GBIT 1.866GHZ 200WFBGA
DRAM DRAM LPDDR4 256MX32 WFBGA AIT
IC DRAM 8GBIT 1.866GHZ 200WFBGA
The three parts on the right have similar specifications to MT53E256M32D2DS-053 AIT:B TR.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatRoHS StatusFactory Lead TimeView Compare
-
MT53E256M32D2DS-053 AIT:B TRSurface Mount200-WFBGA-40°C~95°CTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V8Gb 256M x 32Volatile1.866GHzDRAMROHS3 Compliant--
-
Surface Mount200-VFBGA-30°C~85°C TCTrayNot For New Designs3 (168 Hours)SDRAM - Mobile LPDDR41.1V24Gb 768M x 32Volatile1600MHzDRAMROHS3 Compliant-
-
Surface Mount200-WFBGA-40°C~95°C TCTrayActive-SDRAM - Mobile LPDDR41.1V16Gb 512M x 32Volatile1600MHzDRAM--
-
---30°C~105°C TCTrayActive-SDRAM - Mobile LPDDR41.1V16Gb 256M x 64Volatile1600MHzDRAM-9 Weeks
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