MT53E256M32D2DS-053 AIT:B

Micron Technology Inc. MT53E256M32D2DS-053 AIT:B

Part Number:
MT53E256M32D2DS-053 AIT:B
Manufacturer:
Micron Technology Inc.
Ventron No:
7374426-MT53E256M32D2DS-053 AIT:B
Description:
Memory IC 14.5mm mm
ECAD Model:
Datasheet:
MT53E256M32D2DS-053 AIT:B

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Specifications
Micron Technology Inc. MT53E256M32D2DS-053 AIT:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E256M32D2DS-053 AIT:B.
  • Factory Lead Time
    11 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    200-WFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -40°C~95°C
  • Packaging
    Tray
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    200
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
  • Technology
    SDRAM - Mobile LPDDR4
  • Voltage - Supply
    0.6V 1.1V
  • Terminal Position
    BOTTOM
  • Terminal Form
    BALL
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    1.1V
  • Terminal Pitch
    0.8mm
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PBGA-B200
  • Supply Voltage-Max (Vsup)
    1.17V
  • Supply Voltage-Min (Vsup)
    1.06V
  • Memory Size
    8Gb 256M x 32
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    1.866GHz
  • Memory Format
    DRAM
  • Organization
    256MX32
  • Memory Width
    32
  • Memory Density
    8589934592 bit
  • Screening Level
    AEC-Q100
  • Access Mode
    SINGLE BANK PAGE BURST
  • Length
    14.5mm
  • Height Seated (Max)
    0.8mm
  • Width
    10mm
  • RoHS Status
    ROHS3 Compliant
Description
MT53E256M32D2DS-053 AIT:B Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 200-WFBGA. Memory size on the chip is 8Gb 256M x 32. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V. The recommended mounting type for this device is Surface Mount. On the chip, there are 200 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.1V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 1.866GHz range. It also features SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address.

MT53E256M32D2DS-053 AIT:B Features
Package / Case: 200-WFBGA
Additional Feature:SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX


MT53E256M32D2DS-053 AIT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 AIT:B Memory applications.


eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT53E256M32D2DS-053 AIT:B More Descriptions
DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 Automotive AEC-Q100 200-Pin WFBGA Tray
Active BALL AEC-Q100 BOTTOM ic memory -40C~95C 1.06V 8589934592bit 10mm
SDRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Memory Configuration: 256M x 32bit; Memory Case Style: WFBGA; No. of Pins: 200Pins; IC Interface Type: Parallel; Access Time: 535ps; Page Size: 2048Byte; Operating Temperature Min: -40°
DRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Type:Mobile LPDDR4; Memory Configuration:256M x 32bit; Clock Frequency Max:1.866GHz; IC Case / Package:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; IC Mounting:Surface Mount RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MT53E256M32D2DS-053 AIT:B.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Technology
    Voltage - Supply
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Operating Mode
    Clock Frequency
    Memory Format
    Organization
    Memory Width
    Memory Density
    Screening Level
    Access Mode
    Length
    Height Seated (Max)
    Width
    RoHS Status
    Supplier Device Package
    View Compare
  • MT53E256M32D2DS-053 AIT:B
    MT53E256M32D2DS-053 AIT:B
    11 Weeks
    Surface Mount
    200-WFBGA
    YES
    -40°C~95°C
    Tray
    e1
    Active
    3 (168 Hours)
    200
    Tin/Silver/Copper (Sn/Ag/Cu)
    SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
    SDRAM - Mobile LPDDR4
    0.6V 1.1V
    BOTTOM
    BALL
    260
    1
    1.1V
    0.8mm
    30
    R-PBGA-B200
    1.17V
    1.06V
    8Gb 256M x 32
    1
    Volatile
    SYNCHRONOUS
    1.866GHz
    DRAM
    256MX32
    32
    8589934592 bit
    AEC-Q100
    SINGLE BANK PAGE BURST
    14.5mm
    0.8mm
    10mm
    ROHS3 Compliant
    -
    -
  • MT53B256M32D1NP-062 AUT:C TR
    6 Weeks
    Surface Mount
    200-WFBGA
    -
    -40°C~125°C TA
    Tape & Reel (TR)
    -
    Obsolete
    3 (168 Hours)
    -
    -
    -
    SDRAM - Mobile LPDDR4
    1.1V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    8Gb 256M x 32
    -
    Volatile
    -
    1.6GHz
    DRAM
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    200-WFBGA (10x14.5)
  • MT53B768M32D4NQ-062 WT:B TR
    -
    Surface Mount
    200-VFBGA
    -
    -30°C~85°C TC
    Tape & Reel (TR)
    -
    Not For New Designs
    3 (168 Hours)
    -
    -
    -
    SDRAM - Mobile LPDDR4
    1.1V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    24Gb 768M x 32
    -
    Volatile
    -
    1600MHz
    DRAM
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
  • MT53B512M32D2NP-053 WT:C
    -
    Surface Mount
    200-WFBGA
    -
    -30°C~85°C TC
    Tray
    -
    Active
    3 (168 Hours)
    -
    -
    -
    SDRAM - Mobile LPDDR4
    1.1V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    16Gb 512M x 32
    -
    Volatile
    -
    1866MHz
    DRAM
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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