Micron Technology Inc. MT53E256M32D2DS-053 AIT:B
- Part Number:
- MT53E256M32D2DS-053 AIT:B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374426-MT53E256M32D2DS-053 AIT:B
- Description:
- Memory IC 14.5mm mm
- Datasheet:
- MT53E256M32D2DS-053 AIT:B
Micron Technology Inc. MT53E256M32D2DS-053 AIT:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E256M32D2DS-053 AIT:B.
- Factory Lead Time11 Weeks
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C
- PackagingTray
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations200
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureSELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply0.6V 1.1V
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.1V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PBGA-B200
- Supply Voltage-Max (Vsup)1.17V
- Supply Voltage-Min (Vsup)1.06V
- Memory Size8Gb 256M x 32
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency1.866GHz
- Memory FormatDRAM
- Organization256MX32
- Memory Width32
- Memory Density8589934592 bit
- Screening LevelAEC-Q100
- Access ModeSINGLE BANK PAGE BURST
- Length14.5mm
- Height Seated (Max)0.8mm
- Width10mm
- RoHS StatusROHS3 Compliant
MT53E256M32D2DS-053 AIT:B Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 200-WFBGA. Memory size on the chip is 8Gb 256M x 32. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V. The recommended mounting type for this device is Surface Mount. On the chip, there are 200 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.1V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 1.866GHz range. It also features SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address.
MT53E256M32D2DS-053 AIT:B Features
Package / Case: 200-WFBGA
Additional Feature:SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
MT53E256M32D2DS-053 AIT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 AIT:B Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 200-WFBGA. Memory size on the chip is 8Gb 256M x 32. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V. The recommended mounting type for this device is Surface Mount. On the chip, there are 200 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.1V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 1.866GHz range. It also features SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address.
MT53E256M32D2DS-053 AIT:B Features
Package / Case: 200-WFBGA
Additional Feature:SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
MT53E256M32D2DS-053 AIT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-053 AIT:B Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT53E256M32D2DS-053 AIT:B More Descriptions
DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 Automotive AEC-Q100 200-Pin WFBGA Tray
Active BALL AEC-Q100 BOTTOM ic memory -40C~95C 1.06V 8589934592bit 10mm
SDRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Memory Configuration: 256M x 32bit; Memory Case Style: WFBGA; No. of Pins: 200Pins; IC Interface Type: Parallel; Access Time: 535ps; Page Size: 2048Byte; Operating Temperature Min: -40°
DRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Type:Mobile LPDDR4; Memory Configuration:256M x 32bit; Clock Frequency Max:1.866GHz; IC Case / Package:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; IC Mounting:Surface Mount RoHS Compliant: Yes
Active BALL AEC-Q100 BOTTOM ic memory -40C~95C 1.06V 8589934592bit 10mm
SDRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Memory Configuration: 256M x 32bit; Memory Case Style: WFBGA; No. of Pins: 200Pins; IC Interface Type: Parallel; Access Time: 535ps; Page Size: 2048Byte; Operating Temperature Min: -40°
DRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Type:Mobile LPDDR4; Memory Configuration:256M x 32bit; Clock Frequency Max:1.866GHz; IC Case / Package:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; IC Mounting:Surface Mount RoHS Compliant: Yes
The three parts on the right have similar specifications to MT53E256M32D2DS-053 AIT:B.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatOrganizationMemory WidthMemory DensityScreening LevelAccess ModeLengthHeight Seated (Max)WidthRoHS StatusSupplier Device PackageView Compare
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MT53E256M32D2DS-053 AIT:B11 WeeksSurface Mount200-WFBGAYES-40°C~95°CTraye1Active3 (168 Hours)200Tin/Silver/Copper (Sn/Ag/Cu)SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAXSDRAM - Mobile LPDDR40.6V 1.1VBOTTOMBALL26011.1V0.8mm30R-PBGA-B2001.17V1.06V8Gb 256M x 321VolatileSYNCHRONOUS1.866GHzDRAM256MX32328589934592 bitAEC-Q100SINGLE BANK PAGE BURST14.5mm0.8mm10mmROHS3 Compliant--
-
6 WeeksSurface Mount200-WFBGA--40°C~125°C TATape & Reel (TR)-Obsolete3 (168 Hours)---SDRAM - Mobile LPDDR41.1V----------8Gb 256M x 32-Volatile-1.6GHzDRAM--------ROHS3 Compliant200-WFBGA (10x14.5)
-
-Surface Mount200-VFBGA--30°C~85°C TCTape & Reel (TR)-Not For New Designs3 (168 Hours)---SDRAM - Mobile LPDDR41.1V----------24Gb 768M x 32-Volatile-1600MHzDRAM--------ROHS3 Compliant-
-
-Surface Mount200-WFBGA--30°C~85°C TCTray-Active3 (168 Hours)---SDRAM - Mobile LPDDR41.1V----------16Gb 512M x 32-Volatile-1866MHzDRAM--------ROHS3 Compliant-
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