Micron Technology Inc. MT53E256M32D2DS-046 IT:B
- Part Number:
- MT53E256M32D2DS-046 IT:B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374445-MT53E256M32D2DS-046 IT:B
- Description:
- Memory IC
- ECAD Model:
-
- Datasheet:
- MT53E256M32D2DS-046 IT:B
Micron Technology Inc. MT53E256M32D2DS-046 IT:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E256M32D2DS-046 IT:B.
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Operating Temperature-40°C~95°C
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply0.6V 1.1V
- Memory Size8Gb 256M x 32
- Memory TypeVolatile
- Clock Frequency2.133GHz
- Memory FormatDRAM
- RoHS StatusROHS3 Compliant
MT53E256M32D2DS-046 IT:B Overview
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 200-WFBGA case. There is an 8Gb 256M x 32 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 0.6V 1.1V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. With a clock frequency of 2.133GHz, the memory rotates on its own.
MT53E256M32D2DS-046 IT:B Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-046 IT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-046 IT:B Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tray shape. As you can see, it is embedded in 200-WFBGA case. There is an 8Gb 256M x 32 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 0.6V 1.1V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. With a clock frequency of 2.133GHz, the memory rotates on its own.
MT53E256M32D2DS-046 IT:B Features
Package / Case: 200-WFBGA
MT53E256M32D2DS-046 IT:B Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-046 IT:B Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT53E256M32D2DS-046 IT:B More Descriptions
Active Volatile ROHS3Compliant DRAM ic memory -40C~95C 0.6V 1.1V 8Gb 256M x 32 2.133GHz
DRAM, 256M X 32BIT, -40 TO 95DEG C; Available until stocks are exhausted
LPDDR4 DRAM, 128MX32, CMOS, PBGA200
IC DRAM 8GBIT 2.133GHZ 200WFBGA
DRAM LPDDR4 8G 256MX32 FBGA DDP
CONN MAGJACK 1PORT 100BASE-T PCB
DRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Type:Mobile LPDDR4; Memory Configuration:256M x 32bit; Clock Frequency Max:2.133GHz; IC Case / Package:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; IC Mounting:Surface Mount RoHS Compliant: Yes
DRAM, 256M X 32BIT, -40 TO 95DEG C; Available until stocks are exhausted
LPDDR4 DRAM, 128MX32, CMOS, PBGA200
IC DRAM 8GBIT 2.133GHZ 200WFBGA
DRAM LPDDR4 8G 256MX32 FBGA DDP
CONN MAGJACK 1PORT 100BASE-T PCB
DRAM, 256M X 32BIT, -40 TO 95DEG C; DRAM Type:Mobile LPDDR4; Memory Configuration:256M x 32bit; Clock Frequency Max:2.133GHz; IC Case / Package:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; IC Mounting:Surface Mount RoHS Compliant: Yes
The three parts on the right have similar specifications to MT53E256M32D2DS-046 IT:B.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatRoHS StatusFactory Lead TimeSeriesView Compare
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MT53E256M32D2DS-046 IT:BSurface Mount200-WFBGA-40°C~95°CTrayActive3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V8Gb 256M x 32Volatile2.133GHzDRAMROHS3 Compliant--- -
Surface Mount200-WFBGA-40°C~105°C TATape & Reel (TR)Not For New Designs3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V16Gb 512M x 32Volatile1.6GHzDRAMROHS3 Compliant6 WeeksAutomotive, AEC-Q100
-
Surface Mount200-WFBGA-30°C~85°C TCTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR41.1V16Gb 512M x 32Volatile1866MHzDRAMROHS3 Compliant--
-
---30°C~105°C TCTrayActive-SDRAM - Mobile LPDDR41.1V16Gb 256M x 64Volatile1600MHzDRAM-9 Weeks-
-
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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