MT53E256M32D2DS-046 AAT:B TR

Micron Technology Inc. MT53E256M32D2DS-046 AAT:B TR

Part Number:
MT53E256M32D2DS-046 AAT:B TR
Manufacturer:
Micron Technology Inc.
Ventron No:
7374463-MT53E256M32D2DS-046 AAT:B TR
Description:
Memory IC
ECAD Model:
Datasheet:
MT53E256M32D2DS-046 AAT:B TR

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Specifications
Micron Technology Inc. MT53E256M32D2DS-046 AAT:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E256M32D2DS-046 AAT:B TR.
  • Mounting Type
    Surface Mount
  • Package / Case
    200-WFBGA
  • Operating Temperature
    -40°C~105°C
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    SDRAM - Mobile LPDDR4
  • Voltage - Supply
    0.6V 1.1V
  • Memory Size
    8Gb 256M x 32
  • Memory Type
    Volatile
  • Clock Frequency
    2.133GHz
  • Memory Format
    DRAM
  • RoHS Status
    ROHS3 Compliant
Description
MT53E256M32D2DS-046 AAT:B TR Overview
In this case, the memory type of the device can be classified as Volatile. Case Tape & Reel (TR) is available. An embedded 200-WFBGA case surrounds memory ics. It is estimated that the memory size on the chip is 8Gb 256M x 32. As with most mainstream devices, this one uses DRAM-format memory. Due to its wide temperature range of -40°C~105°C, this device is well suited to a wide range of applications that require high performance. With 0.6V 1.1V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. In order to operate effectively, the memory rotates at a clock frequency within a range of 2.133GHz.

MT53E256M32D2DS-046 AAT:B TR Features
Package / Case: 200-WFBGA


MT53E256M32D2DS-046 AAT:B TR Applications
There are a lot of Micron Technology Inc.
MT53E256M32D2DS-046 AAT:B TR Memory applications.


networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT53E256M32D2DS-046 AAT:B TR More Descriptions
DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256M X 32 1.1V/1.8V 200-Pin WFBGA T/R
DRAM DRAM LPDDR4 256MX32 WFBGA AAT
IC DRAM 8GBIT 2.133GHZ 200WFBGA
Product Comparison
The three parts on the right have similar specifications to MT53E256M32D2DS-046 AAT:B TR.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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