Micron Technology Inc. MT53E128M32D2DS-053 AIT:A
- Part Number:
- MT53E128M32D2DS-053 AIT:A
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374587-MT53E128M32D2DS-053 AIT:A
- Description:
- Memory IC
- Datasheet:
- MT53E128M32D2DS-053 AIT:A
Micron Technology Inc. MT53E128M32D2DS-053 AIT:A technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E128M32D2DS-053 AIT:A.
- Factory Lead Time11 Weeks
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Operating Temperature-40°C~95°C
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply0.6V 1.1V
- Memory Size4Gb 128M x 32
- Memory TypeVolatile
- Clock Frequency1.866GHz
- Memory FormatDRAM
- RoHS StatusROHS3 Compliant
MT53E128M32D2DS-053 AIT:A Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 200-WFBGA. Memory size on the chip is 4Gb 128M x 32. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V. The recommended mounting type for this device is Surface Mount. There is a clock frequency rotation of the memory within a 1.866GHz range.
MT53E128M32D2DS-053 AIT:A Features
Package / Case: 200-WFBGA
MT53E128M32D2DS-053 AIT:A Applications
There are a lot of Micron Technology Inc.
MT53E128M32D2DS-053 AIT:A Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 200-WFBGA. Memory size on the chip is 4Gb 128M x 32. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~95°C makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 0.6V 1.1V. The recommended mounting type for this device is Surface Mount. There is a clock frequency rotation of the memory within a 1.866GHz range.
MT53E128M32D2DS-053 AIT:A Features
Package / Case: 200-WFBGA
MT53E128M32D2DS-053 AIT:A Applications
There are a lot of Micron Technology Inc.
MT53E128M32D2DS-053 AIT:A Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT53E128M32D2DS-053 AIT:A More Descriptions
Active Volatile ROHS3Compliant DRAM ic memory -40C~95C 0.6V 1.1V 4Gb 128M x 32 1.866GHz
SDRAM, 128M X 32BIT, -40 TO 95DEG C; DRAM Memory Configuration: 128M x 32bit; Memory Case Style: WFBGA; No. of Pins: 200Pins; IC Interface Type: Parallel; Access Time: 535ps; Page Size: 2048Byte; Operating Temperature Min: -40°
Dram, 128M X 32Bit, -40 To 95Deg C; Dram Type:Mobile Lpddr4; Memory Configuration:128M X 32Bit; Clock Frequency Max:1.866Ghz; Ic Case/Package:Wfbga; No. Of Pins:200Pins; Supply Voltage Nom:1.1V; Ic Mounting:Surface Mount Rohs Compliant: Yes |Micron MT53E128M32D2DS-053 AIT:A
SDRAM, 128M X 32BIT, -40 TO 95DEG C; DRAM Memory Configuration: 128M x 32bit; Memory Case Style: WFBGA; No. of Pins: 200Pins; IC Interface Type: Parallel; Access Time: 535ps; Page Size: 2048Byte; Operating Temperature Min: -40°
Dram, 128M X 32Bit, -40 To 95Deg C; Dram Type:Mobile Lpddr4; Memory Configuration:128M X 32Bit; Clock Frequency Max:1.866Ghz; Ic Case/Package:Wfbga; No. Of Pins:200Pins; Supply Voltage Nom:1.1V; Ic Mounting:Surface Mount Rohs Compliant: Yes |Micron MT53E128M32D2DS-053 AIT:A
The three parts on the right have similar specifications to MT53E128M32D2DS-053 AIT:A.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatRoHS StatusSeriesView Compare
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MT53E128M32D2DS-053 AIT:A11 WeeksSurface Mount200-WFBGA-40°C~95°CTrayActive3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V4Gb 128M x 32Volatile1.866GHzDRAMROHS3 Compliant--
-
-Surface Mount200-VFBGA-30°C~85°C TCTrayNot For New Designs3 (168 Hours)SDRAM - Mobile LPDDR41.1V24Gb 768M x 32Volatile1600MHzDRAMROHS3 Compliant-
-
6 WeeksSurface Mount200-WFBGA-40°C~105°C TATape & Reel (TR)Not For New Designs3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V16Gb 512M x 32Volatile1.6GHzDRAMROHS3 CompliantAutomotive, AEC-Q100
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-Surface Mount200-WFBGA-30°C~85°C TCTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR41.1V16Gb 512M x 32Volatile1866MHzDRAMROHS3 Compliant-
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