Micron Technology Inc. MT53E128M32D2DS-046 AAT:A TR
- Part Number:
- MT53E128M32D2DS-046 AAT:A TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374635-MT53E128M32D2DS-046 AAT:A TR
- Description:
- Memory IC
- ECAD Model:
-
- Datasheet:
- MT53E128M32D2DS-046 AAT:A TR
Micron Technology Inc. MT53E128M32D2DS-046 AAT:A TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53E128M32D2DS-046 AAT:A TR.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Operating Temperature-40°C~105°C
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply0.6V 1.1V
- Memory Size4Gb 128M x 32
- Memory TypeVolatile
- Clock Frequency2.133GHz
- Memory FormatDRAM
- RoHS StatusROHS3 Compliant
MT53E128M32D2DS-046 AAT:A TR Overview
Volatile is its memory type. It is available in a case with a Tape & Reel (TR) shape. As you can see, it is embedded in 200-WFBGA case. There is an 4Gb 128M x 32 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 0.6V 1.1V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. With a clock frequency of 2.133GHz, the memory rotates on its own.
MT53E128M32D2DS-046 AAT:A TR Features
Package / Case: 200-WFBGA
MT53E128M32D2DS-046 AAT:A TR Applications
There are a lot of Micron Technology Inc.
MT53E128M32D2DS-046 AAT:A TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
Volatile is its memory type. It is available in a case with a Tape & Reel (TR) shape. As you can see, it is embedded in 200-WFBGA case. There is an 4Gb 128M x 32 memory capacity on the chip. In this device, the memory is of the DRAM-format, which is a popular format in the mainstream computing sector. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 0.6V 1.1V is possible to be applied to the supply. There is a recommendation that Surface Mount mounting type should be used for this product. With a clock frequency of 2.133GHz, the memory rotates on its own.
MT53E128M32D2DS-046 AAT:A TR Features
Package / Case: 200-WFBGA
MT53E128M32D2DS-046 AAT:A TR Applications
There are a lot of Micron Technology Inc.
MT53E128M32D2DS-046 AAT:A TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT53E128M32D2DS-046 AAT:A TR More Descriptions
DRAM Chip Mobile LPDDR4 SDRAM 4Gbit 128M X 32 1.1V/1.8V 200-Pin WFBGA T/R
NVRAM NVSRAM Parallel 16K-Bit 5V 24-Pin EDIP
DRAM LPDDR4 4G 128MX32 FBGA AAT DDP
IC DRAM 4GBIT 2.133GHZ 200WFBGA
NVRAM NVSRAM Parallel 16K-Bit 5V 24-Pin EDIP
DRAM LPDDR4 4G 128MX32 FBGA AAT DDP
IC DRAM 4GBIT 2.133GHZ 200WFBGA
The three parts on the right have similar specifications to MT53E128M32D2DS-046 AAT:A TR.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatRoHS StatusSeriesView Compare
-
MT53E128M32D2DS-046 AAT:A TR12 WeeksSurface Mount200-WFBGA-40°C~105°CTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V4Gb 128M x 32Volatile2.133GHzDRAMROHS3 Compliant-- -
6 WeeksSurface Mount200-WFBGA-40°C~105°C TATape & Reel (TR)Not For New Designs3 (168 Hours)SDRAM - Mobile LPDDR40.6V 1.1V16Gb 512M x 32Volatile1.6GHzDRAMROHS3 CompliantAutomotive, AEC-Q100
-
-Surface Mount200-WFBGA-40°C~95°C TCTrayActive-SDRAM - Mobile LPDDR41.1V16Gb 512M x 32Volatile1600MHzDRAM--
-
9 Weeks---30°C~105°C TCTrayActive-SDRAM - Mobile LPDDR41.1V16Gb 256M x 64Volatile1600MHzDRAM--
-
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 November 2023
Comparing the DHT11 and DHT22 Temperature and Humidity Sensor
Ⅰ. What is a temperature sensor?Ⅱ. DHT11 vs DHT22: OverviewⅢ. DHT11 vs DHT22: Symbol and footprintⅣ. DHT11 vs DHT22: FeaturesⅤ. DHT11 vs DHT22: Pin configurationⅥ. DHT11 vs DHT22:... -
21 November 2023
MCP2551 CAN Transceiver Features, Working Principle, MCP2551 vs TJA1050
Ⅰ. Overview of MCP2551 transceiverⅡ. Manufacturer of MCP2551 transceiverⅢ. Features of MCP2551 transceiverⅣ. Working principle of MCP2551 transceiverⅤ. Block diagram of MCP2551 transceiverⅥ. What is the difference between... -
21 November 2023
AD9361 RF Transceiver Manufacturer, Features, Structure and Working Principle
Ⅰ. Overview of AD9361 RF transceiverⅡ. Manufacturer of AD9361 RF transceiverⅢ. Block diagram of AD9361 RF transceiverⅣ. Structure and working principle of AD9361 RF transceiverⅤ. Features of AD9361... -
22 November 2023
ULN2804A Transistor Array Equivalents, Symbol, Working Principle and More
Ⅰ. Overview of ULN2804AⅡ. Symbol, footprint and pin configuration of ULN2804AⅢ. Manufacturer of ULN2804AⅣ. Features of ULN2804AⅤ. Technical parameters of ULN2804AⅥ. Working principle of ULN2804AⅦ. Applications of ULN2804AⅧ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.