Micron Technology Inc. MT46V16M16CY-5B AIT:M
- Part Number:
- MT46V16M16CY-5B AIT:M
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7372735-MT46V16M16CY-5B AIT:M
- Description:
- 2.6V V 60 Pin Memory IC MT46V16M16 12.5mm mm
- Datasheet:
- MT46V(32M8,16M16)
Micron Technology Inc. MT46V16M16CY-5B AIT:M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46V16M16CY-5B AIT:M.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingBulk
- Published2011
- JESD-609 Codee1
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.24
- TechnologySDRAM - DDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage2.6V
- Terminal Pitch1mm
- Base Part NumberMT46V16M16
- Pin Count60
- JESD-30 CodeR-PBGA-B60
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)2.7V
- Power Supplies2.6V
- Supply Voltage-Min (Vsup)2.5V
- Memory Size256Mb 16M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency200MHz
- Supply Current-Max0.175mA
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization16MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.004A
- Memory Density268435456 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Length12.5mm
- Height Seated (Max)1.2mm
- Width8mm
- RoHS StatusROHS3 Compliant
MT46V16M16CY-5B AIT:M Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Bulk size. The case is embedded in 60-TFBGA. Memory size on the chip is 256Mb 16M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.3V~2.7V. The recommended mounting type for this device is Surface Mount. On the chip, there are 60 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 2.6V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 200MHz range. It is common to select similar parts by referring to the device's base part number, MT46V16M16. A memory device like this has 60 pins, indicating that there are 60 memory locations on the device. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address. This memory chip requires only 2.6V of power. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.175mA , it is able to operate from a variety of supplies.
MT46V16M16CY-5B AIT:M Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V16M16CY-5B AIT:M Applications
There are a lot of Micron Technology Inc.
MT46V16M16CY-5B AIT:M Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Bulk size. The case is embedded in 60-TFBGA. Memory size on the chip is 256Mb 16M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.3V~2.7V. The recommended mounting type for this device is Surface Mount. On the chip, there are 60 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 2.6V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 200MHz range. It is common to select similar parts by referring to the device's base part number, MT46V16M16. A memory device like this has 60 pins, indicating that there are 60 memory locations on the device. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address. This memory chip requires only 2.6V of power. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.175mA , it is able to operate from a variety of supplies.
MT46V16M16CY-5B AIT:M Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V16M16CY-5B AIT:M Applications
There are a lot of Micron Technology Inc.
MT46V16M16CY-5B AIT:M Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT46V16M16CY-5B AIT:M More Descriptions
DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.6V Automotive 60-Pin FBGA
DRAM, DDR SDRAM, 256Mb, x16, 60-ball FBGA, RoHSMicron SCT
Buffers & Line Drivers QUAD 3-STATE BUS BUF
IC DRAM 256MBIT PARALLEL 60FBGA
Dram, 16M X 16Bit, -40 To 85Deg C; Dram Type:Ddr; Dram Density:256Mbit; Dram Memory Configuration:16M X 16Bit; Clock Frequency:200Mhz; Memory Case Style:Fbga; No. Of Pins:60Pins; Supply Voltage Nom:2.5V; Access Time:5Ns Rohs Compliant: Yes |Micron MT46V16M16CY-5B AIT:M
DRAM, DDR SDRAM, 256Mb, x16, 60-ball FBGA, RoHSMicron SCT
Buffers & Line Drivers QUAD 3-STATE BUS BUF
IC DRAM 256MBIT PARALLEL 60FBGA
Dram, 16M X 16Bit, -40 To 85Deg C; Dram Type:Ddr; Dram Density:256Mbit; Dram Memory Configuration:16M X 16Bit; Clock Frequency:200Mhz; Memory Case Style:Fbga; No. Of Pins:60Pins; Supply Voltage Nom:2.5V; Access Time:5Ns Rohs Compliant: Yes |Micron MT46V16M16CY-5B AIT:M
The three parts on the right have similar specifications to MT46V16M16CY-5B AIT:M.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)WidthRoHS StatusReach Compliance CodeView Compare
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MT46V16M16CY-5B AIT:M4 WeeksSurface Mount60-TFBGAYES-40°C~85°C TABulk2011e1Last Time Buy3 (168 Hours)60EAR99Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)AUTO/SELF REFRESH8542.32.00.24SDRAM - DDR2.3V~2.7VBOTTOM12.6V1mmMT46V16M1660R-PBGA-B60Not Qualified2.7V2.6V2.5V256Mb 16M x 161VolatileSYNCHRONOUS200MHz0.175mA700psDRAMParallel16MX163-STATE1615ns0.004A268435456 bitCOMMON819224824812.5mm1.2mm8mmROHS3 Compliant--
-
-Surface Mount60-VFBGAYES-40°C~105°C TATray2008-Obsolete3 (168 Hours)60EAR99-AUTO/SELF REFRESH8542.32.00.24SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmMT46H16M1660R-PBGA-B60Not Qualified1.95V1.8V1.7V256Mb 16M x 161VolatileSYNCHRONOUS166MHz0.085mA5nsDRAMParallel16MX163-STATE1612ns0.00001A268435456 bitCOMMON81922481624816---ROHS3 Compliant-
-
-Surface Mount66-TSSOP (0.400, 10.16mm Width)-0°C~70°C TATape & Reel (TR)--Obsolete4 (72 Hours)-----SDRAM - DDR2.3V~2.7V----MT46V128M4------512Mb 128M x 4-Volatile-133MHz-750psDRAMParallel---15ns---------Non-RoHS Compliant-
-
4 WeeksSurface Mount60-VFBGAYES-40°C~105°C TATray2015e1Obsolete-60EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mm-60R-PBGA-B60-1.95V1.8V1.7V1Gb 64M x 161VolatileSYNCHRONOUS200MHz0.135mA5nsDRAMParallel64MX163-STATE1615ns0.000015A1073741824 bitCOMMON819224816248169mm1mm8mmRoHS Compliantcompliant
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