Micron Technology Inc. MT40A1G8WE-075E AIT:B
- Part Number:
- MT40A1G8WE-075E AIT:B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374484-MT40A1G8WE-075E AIT:B
- Description:
- Memory IC 12mm mm
- Datasheet:
- MT40A1G8WE-075E AIT:B
Micron Technology Inc. MT40A1G8WE-075E AIT:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT40A1G8WE-075E AIT:B.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case78-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTray
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR4
- Voltage - Supply1.14V~1.26V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.2V
- Terminal Pitch0.8mm
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PBGA-B78
- Supply Voltage-Max (Vsup)1.26V
- Supply Voltage-Min (Vsup)1.14V
- Memory Size8Gb 1G x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency1.33GHz
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization1GX8
- Memory Width8
- Memory Density8589934592 bit
- Access ModeMULTI BANK PAGE BURST
- Length12mm
- Height Seated (Max)1.2mm
- Width8mm
- RoHS StatusRoHS Compliant
MT40A1G8WE-075E AIT:B Overview
As far as its memory type goes, it falls into the Volatile category. You can get memory ics in a Tray case. 78-TFBGA case encloses it. There is 8Gb 1G x 8 of memory on the chip. The device uses a mainstream DRAM-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~95°C TC. There is a voltage range of 1.14V~1.26V for the supply voltage. It is recommended that the mounting type be Surface Mount. There are 78 terminations on the chip. There are 1 functions supported by this part as part of the comprehensive working process. The memory device is designed to be supplied with an 1.2V volt power supply in order to operate properly. It has a clock frequency of 1.33GHz. Despite all its benefits, this memory chip also offers AUTO/SELF REFRESH for improved system performance. Using 1 ports, a single memory address can be read and/or written.
MT40A1G8WE-075E AIT:B Features
Package / Case: 78-TFBGA
Additional Feature:AUTO/SELF REFRESH
MT40A1G8WE-075E AIT:B Applications
There are a lot of Micron Technology Inc.
MT40A1G8WE-075E AIT:B Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
As far as its memory type goes, it falls into the Volatile category. You can get memory ics in a Tray case. 78-TFBGA case encloses it. There is 8Gb 1G x 8 of memory on the chip. The device uses a mainstream DRAM-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~95°C TC. There is a voltage range of 1.14V~1.26V for the supply voltage. It is recommended that the mounting type be Surface Mount. There are 78 terminations on the chip. There are 1 functions supported by this part as part of the comprehensive working process. The memory device is designed to be supplied with an 1.2V volt power supply in order to operate properly. It has a clock frequency of 1.33GHz. Despite all its benefits, this memory chip also offers AUTO/SELF REFRESH for improved system performance. Using 1 ports, a single memory address can be read and/or written.
MT40A1G8WE-075E AIT:B Features
Package / Case: 78-TFBGA
Additional Feature:AUTO/SELF REFRESH
MT40A1G8WE-075E AIT:B Applications
There are a lot of Micron Technology Inc.
MT40A1G8WE-075E AIT:B Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
MT40A1G8WE-075E AIT:B More Descriptions
DRAM, DDR4, 8Gb, x8, 78-ball FBGA, RoHSMicron SCT
IC DRAM 512M PARALLEL 152VFBGA
IC DRAM 8GBIT PARALLEL 78FBGA
DRAM DDR4 8G 1GX8 FBGA
MICMT40A1G8WE-075E AIT:B
IC DRAM 512M PARALLEL 152VFBGA
IC DRAM 8GBIT PARALLEL 78FBGA
DRAM DDR4 8G 1GX8 FBGA
MICMT40A1G8WE-075E AIT:B
The three parts on the right have similar specifications to MT40A1G8WE-075E AIT:B.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityAccess ModeLengthHeight Seated (Max)WidthRoHS StatusView Compare
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MT40A1G8WE-075E AIT:B13 WeeksSurface Mount78-TFBGAYES-40°C~95°C TCTraye1Active3 (168 Hours)78EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESHSDRAM - DDR41.14V~1.26VBOTTOM26011.2V0.8mmcompliant30R-PBGA-B781.26V1.14V8Gb 1G x 81VolatileSYNCHRONOUS1.33GHzDRAMParallel1GX888589934592 bitMULTI BANK PAGE BURST12mm1.2mm8mmRoHS Compliant-
-
-----Tape & Reel (TR)-Active--------------------------------
-
-----Tray-Active------------compliant-------------------
-
-Surface Mount96-TFBGA--40°C~95°C TCTape & Reel (TR)-Last Time Buy3 (168 Hours)----SDRAM - DDR41.14V~1.26V----------4Gb 256M x 16-Volatile-1.2GHzDRAMParallel-------ROHS3 Compliant
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