Micron Technology Inc. MT29F2G08ABBGAH4-AATES:G

Name: MT29F2G08ABBGAH4-AATES:G
Brand: Micron Technology Inc.
SKU: 7374556-MT29F2G08ABBGAH4-AATES:G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT29F2G08ABBGAH4-AATES:G

Manufacturer:: Micron Technology Inc.

Ventron No:: 7374556-MT29F2G08ABBGAH4-AATES:G

Description:: Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series

ECAD Model:

Datasheet:: MT29F2G08ABBGAH4-AATES:G

Specifications

Micron Technology Inc. MT29F2G08ABBGAH4-AATES:G technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F2G08ABBGAH4-AATES:G.

Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
63-VFBGA
Operating Temperature
-40°C~105°C TA
Packaging
Bulk
Series
Automotive, AEC-Q100
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
FLASH - NAND (SLC)
Voltage - Supply
1.7V~1.95V
Memory Size
2Gb 256M x 8
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Write Cycle Time - Word, Page
30ns
RoHS Status
ROHS3 Compliant

Description

MT29F2G08ABBGAH4-AATES:G Overview
As far as its memory type goes, it falls into the Non-Volatile category. You can get memory ics in a Bulk case. 63-VFBGA case encloses it. There is 2Gb 256M x 8 of memory on the chip. The device uses a mainstream FLASH-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~105°C TA. There is a voltage range of 1.7V~1.95V for the supply voltage. It is recommended that the mounting type be Surface Mount. This part is part of the Automotive, AEC-Q100 series of memory devices, which play a key role in its target applications.

MT29F2G08ABBGAH4-AATES:G Features
Package / Case: 63-VFBGA

MT29F2G08ABBGAH4-AATES:G Applications
There are a lot of Micron Technology Inc.
MT29F2G08ABBGAH4-AATES:G Memory applications.

multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory

MT29F2G08ABBGAH4-AATES:G More Descriptions

NAND Flash, SLC NAND Flash, 2Gb, 1.8V, 63-ball VFBGA, RoHSMicron SCT
NAND Flash SLC 2G 256MX8 FBGA
IC FLASH 2GBIT PARALLEL 63VFBGA
IC DRAM 512M PARALLEL 60FBGA

Product Comparison

The three parts on the right have similar specifications to MT29F2G08ABBGAH4-AATES:G.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Memory Size

Memory Type

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Clock Frequency

Surface Mount

Number of Terminations

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Operating Mode

Organization

Memory Width

Memory Density

Height Seated (Max)

Length

Width

View Compare
MT29F2G08ABBGAH4-AATES:G

Micron Technology Inc.

8 Weeks

Surface Mount

63-VFBGA

-40°C~105°C TA

Bulk

Automotive, AEC-Q100

Active

3 (168 Hours)

FLASH - NAND (SLC)

1.7V~1.95V

2Gb 256M x 8

Non-Volatile

FLASH

Parallel

30ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT29AZ5A3CHHWD-18AAT.84F TR

Micron Technology Inc.

-

Surface Mount

162-VFBGA

-40°C~105°C TA

Tape & Reel (TR)

Automotive, AEC-Q100

Last Time Buy

3 (168 Hours)

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2

Non-Volatile

FLASH, RAM

Parallel

-

ROHS3 Compliant

533MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29F2G08ABBGAH4-AATES:G vs MT29AZ5A3CHHWD-18AAT.84F TR
MT29C1G12MAAIYAMR-5 AIT

Micron Technology Inc.

16 Weeks

Surface Mount

130-VFBGA

-40°C~85°C TA

Tray

-

Active

-

FLASH - NAND, Mobile LPDRAM

1.7V~1.95V

1Gb 128M x 8 N 512M 16M x 32 LPDRAM

Non-Volatile

FLASH, RAM

Parallel

-

RoHS Compliant

200MHz

YES

130

LPDRAM IS ORGANISED AS 32M X 16

BOTTOM

NOT SPECIFIED

1

1.8V

0.65mm

compliant

NOT SPECIFIED

R-PBGA-B130

1.95V

1.7V

SYNCHRONOUS

128MX8

8

1073741824 bit

1mm

9mm

8mm

MT29F2G08ABBGAH4-AATES:G vs MT29C1G12MAAIYAMR-5 AIT
MT29AZ5A3CHHWD-18AIT.84F

Micron Technology Inc.

-

Surface Mount

162-VFBGA

-40°C~85°C TA

Tray

-

Last Time Buy

3 (168 Hours)

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2

Non-Volatile

FLASH, RAM

Parallel

-

-

533MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29F2G08ABBGAH4-AATES:G vs MT29AZ5A3CHHWD-18AIT.84F