Micron Technology Inc. MT29F256G08EBHAFJ4-3R:A TR
- Part Number:
- MT29F256G08EBHAFJ4-3R:A TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374413-MT29F256G08EBHAFJ4-3R:A TR
- Description:
- Memory IC
- Datasheet:
- MT29F256G08EBHAFJ4-3R:A TR
Micron Technology Inc. MT29F256G08EBHAFJ4-3R:A TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F256G08EBHAFJ4-3R:A TR.
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / Case132-VBGA
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.5V~3.6V
- Memory Size256Gb 32G x 8
- Memory TypeNon-Volatile
- Clock Frequency333MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F256G08EBHAFJ4-3R:A TR Overview
There is a memory type Non-Volatile for this type of device. The case comes in the Tape & Reel (TR) style. The file is embedded in a 132-VBGA case. This chip has an 256Gb 32G x 8 size of memory on it, so a lot of data can be stored on it. Memory data is stored in FLASH-format, which is common in mainstream devices. 0°C~70°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 2.5V~3.6V can be applied to it. There is a recommended mounting type of Surface Mount for it. During the rotation of the clock, the ic memory chip is set as 333MHz.
MT29F256G08EBHAFJ4-3R:A TR Features
Package / Case: 132-VBGA
MT29F256G08EBHAFJ4-3R:A TR Applications
There are a lot of Micron Technology Inc.
MT29F256G08EBHAFJ4-3R:A TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
There is a memory type Non-Volatile for this type of device. The case comes in the Tape & Reel (TR) style. The file is embedded in a 132-VBGA case. This chip has an 256Gb 32G x 8 size of memory on it, so a lot of data can be stored on it. Memory data is stored in FLASH-format, which is common in mainstream devices. 0°C~70°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 2.5V~3.6V can be applied to it. There is a recommended mounting type of Surface Mount for it. During the rotation of the clock, the ic memory chip is set as 333MHz.
MT29F256G08EBHAFJ4-3R:A TR Features
Package / Case: 132-VBGA
MT29F256G08EBHAFJ4-3R:A TR Applications
There are a lot of Micron Technology Inc.
MT29F256G08EBHAFJ4-3R:A TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
MT29F256G08EBHAFJ4-3R:A TR More Descriptions
NAND Flash TLC 256G 32GX8 VBGA
IC FLASH 256GBIT PAR 132VBGA
IC FLASH 256G PARALLEL 333MHZ
IC DRAM 288M PARALLEL 144UBGA
IC FLASH 256GBIT PAR 132VBGA
IC FLASH 256G PARALLEL 333MHZ
IC DRAM 288M PARALLEL 144UBGA
The three parts on the right have similar specifications to MT29F256G08EBHAFJ4-3R:A TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F256G08EBHAFJ4-3R:A TR5 WeeksSurface Mount132-VBGA0°C~70°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.5V~3.6V256Gb 32G x 8Non-Volatile333MHzFLASHParallelROHS3 Compliant----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-YES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel----------------------
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