MT29F256G08CMHGBJ4-3RES:G TR

Micron Technology Inc. MT29F256G08CMHGBJ4-3RES:G TR

Part Number:
MT29F256G08CMHGBJ4-3RES:G TR
Manufacturer:
Micron Technology Inc.
Ventron No:
7094549-MT29F256G08CMHGBJ4-3RES:G TR
Description:
Memory IC
ECAD Model:
Datasheet:
MT29F256G08CMHGBJ4-3RES:G TR

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Specifications
Micron Technology Inc. MT29F256G08CMHGBJ4-3RES:G TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F256G08CMHGBJ4-3RES:G TR.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    132-VBGA
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.5V~3.6V
  • Memory Size
    256Gb 32G x 8
  • Memory Type
    Non-Volatile
  • Clock Frequency
    333MHz
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • RoHS Status
    ROHS3 Compliant
Description
MT29F256G08CMHGBJ4-3RES:G TR Overview
This product is manufactured by Micron Technology Inc., is an advanced Memory electronic component designed for high-performance applications. It features a surface mount mounting type and comes in a 132-VBGA package/case. With an operating temperature range of 0°C to 70°C TA, this part is currently active and has a moisture sensitivity level (MSL) of 3 (168 hours). The technology employed is FLASH - NAND, while the voltage supply ranges from 2.5V to 3.6V. The memory size stands at 256Gb, consisting of 32Gb 8-channel memory arrays. The clock frequency is set at 333MHz, and the memory format is FLASH.

MT29F256G08CMHGBJ4-3RES:G TR Features
Package / Case: 132-VBGA


MT29F256G08CMHGBJ4-3RES:G TR Applications
There are a lot of Micron Technology Inc.
MT29F256G08CMHGBJ4-3RES:G TR Memory applications.


personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
MT29F256G08CMHGBJ4-3RES:G TR More Descriptions
Flash Memory 1 Megabit Boot Block Flash Memory
IC FLASH 256GBIT PAR 132VBGA
IC FLASH 256G PARALLEL 333MHZ
Product Comparison
The three parts on the right have similar specifications to MT29F256G08CMHGBJ4-3RES:G TR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Memory Size
    Memory Type
    Clock Frequency
    Memory Format
    Memory Interface
    RoHS Status
    Series
    Surface Mount
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Operating Mode
    Organization
    Memory Width
    Memory Density
    Height Seated (Max)
    Length
    Width
    View Compare
  • MT29F256G08CMHGBJ4-3RES:G TR
    MT29F256G08CMHGBJ4-3RES:G TR
    12 Weeks
    Surface Mount
    132-VBGA
    0°C~70°C TA
    Tape & Reel (TR)
    Active
    3 (168 Hours)
    FLASH - NAND
    2.5V~3.6V
    256Gb 32G x 8
    Non-Volatile
    333MHz
    FLASH
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29AZ5A3CHHWD-18AAT.84F TR
    -
    Surface Mount
    162-VFBGA
    -40°C~105°C TA
    Tape & Reel (TR)
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2
    Non-Volatile
    533MHz
    FLASH, RAM
    Parallel
    ROHS3 Compliant
    Automotive, AEC-Q100
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29C1G12MAAIYAMR-5 AIT
    16 Weeks
    Surface Mount
    130-VFBGA
    -40°C~85°C TA
    Tray
    Active
    -
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.95V
    1Gb 128M x 8 N 512M 16M x 32 LPDRAM
    Non-Volatile
    200MHz
    FLASH, RAM
    Parallel
    RoHS Compliant
    -
    YES
    130
    LPDRAM IS ORGANISED AS 32M X 16
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.65mm
    compliant
    NOT SPECIFIED
    R-PBGA-B130
    1.95V
    1.7V
    SYNCHRONOUS
    128MX8
    8
    1073741824 bit
    1mm
    9mm
    8mm
  • MT29AZ5A3CHHWD-18AIT.84F
    -
    Surface Mount
    162-VFBGA
    -40°C~85°C TA
    Tray
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2
    Non-Volatile
    533MHz
    FLASH, RAM
    Parallel
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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